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參數(shù)資料
| 型號： | M27C800-120M6TR |
| 廠商： | 意法半導體 |
| 英文描述： | Octal Buffer/Driver With 3-State Outputs 20-TSSOP -40 to 85 |
| 中文描述： | 8兆1兆x8或512KB的x16紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 11/18頁 |
| 文件大小： | 171K |
| 代理商： | M27C800-120M6TR |
11/18
M27C800
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27C800. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27C800, with V
PP
= V
CC
= 5V. Two identifier
bytes may then be sequenced from the device out-
puts by toggling address line A0 from V
IL
to V
IH
. All
other address lines must be held at V
IL
during
Electronic Signature mode.
Byte 0 (A0 = V
IL
) represents the manufacturer
code and byte 1 (A0 = V
IH
) the device identifier
code. For the STMicroelectronics M27C800, these
two identifier bytes are given in Table 4 and can be
read-out on outputs Q7 to Q0.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C800 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range. Research
shows that constant exposure to room level fluo-
rescent lighting could erase a typical M27C800 in
about 3 years, while it would take approximately 1
week to cause erasure when exposed to direct
sunlight. If the M27C800 is to be exposed to these
types of lighting conditions for extended periods of
time, it is suggested that opaque labels be put over
the M27C800 window to prevent unintentional era-
sure. The recommended erasure procedure for
M27C800 is exposure to short wave ultraviolet
light which has a wavelength of 2537 . The inte-
grated dose (i.e. UV intensity x exposure time) for
erasure should be a minimum of 30 W-sec/cm
2
.
The erasure time with this dosage is approximate-
ly 30 to 40 minutes using an ultraviolet lamp with
12000 μW/cm
2
power rating. The M27C800
should be placed within 2.5cm (1 inch) of the lamp
tubes during the erasure. Some lamps have a filter
on their tubes which should be removed before
erasure.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27C801-100B | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-120F | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100B1TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100B1X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100B6TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27C801-100B1 | 功能描述:可擦除可編程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| M27C801-100B1 | 制造商:STMicroelectronics 功能描述:PROM OTP CMOS 8MB 27C801 DIP32 |
| M27C801-100F1 | 功能描述:可擦除可編程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| M27C801-100F1 | 制造商:STMicroelectronics 功能描述:IC EPROM CMOS 8MB 27C801 DIP32 |
| M27C801-100F6 | 功能描述:可擦除可編程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
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