參數(shù)資料
型號： M27C801-100K1X
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
中文描述： 8兆1兆× 8紫外線存儲器和OTP存儲器
文件頁數(shù)： 5/16頁
文件大?。?/td> 153K
代理商： M27C801-100K1X
5/16
M27C801
Table 7. Read Mode DC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 5V ± 10%)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Maximum DC voltage on Output is V
CC
+0.5V.
Table 8A. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 5V ± 10%)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±10
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±10
μ
A
I
CC
Supply Current
E = V
IL
, GV
PP
= V
IL
,
I
OUT
= 0mA, f = 5MHz
35
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
I
CC2
Supply Current (Standby) CMOS
E > V
CC
– 0.2V
100
μ
A
I
PP
Program Current
V
PP
= V
CC
10
μ
A
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
(2)
Input High Voltage
2
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –1mA
3.6
V
Output High Voltage CMOS
I
OH
= –100
μ
A
V
CC
– 0.7
V
Symbol
Alt
Parameter
Test
Condition
M27C801
Unit
-45
(3)
-60
-70
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
GV
PP
= V
IL
45
60
70
ns
t
ELQV
t
CE
Chip Enable Low to Output Valid
GV
PP
= V
IL
45
60
70
ns
t
GLQV
t
OE
Output Enable Low to Output Valid
E = V
IL
25
30
35
ns
t
EHQZ (2)
t
DF
Chip Enable High to Output Hi-Z
GV
PP
= V
IL
0
25
0
25
0
30
ns
t
GHQZ (2)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
0
25
0
25
0
30
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
,
GV
PP
= V
IL
0
0
0
ns
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
相關(guān)PDF資料
PDF描述
M27C801-100K1TR 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
M27C801-100F6X 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
M27C801-80K1TR 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
M27C801-120B6X 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM
M27V101 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M27C801-100N1 功能描述:可擦除可編程ROM 8M (1Mx8) 100ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92
M27C801-100N1T 制造商:STMicroelectronics 功能描述:EPROM OTP 8MBIT 1MX8 100NS 32TSOP - Tape and Reel
M27C801-120B1 功能描述:可擦除可編程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92
M27C801-120F1 功能描述:可擦除可編程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92
M27C801-120K1 功能描述:可擦除可編程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*