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參數(shù)資料
| 型號(hào)： | M27C801-100N6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8紫外線存儲(chǔ)器和OTP存儲(chǔ)器 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 153K |
| 代理商： | M27C801-100N6TR |
M27C801
10/16
Electronic Signature
The Electronic Signature (ES) mode allows the
reading out of a binary code from an EPROM that
will identify its manufacturer and type. This mode
is intended for use by programming equipment to
automatically match the device to be programmed
with its corresponding programming algorithm.
The ES mode is functional in the 25°C ± 5°C am-
bient temperature range that is required when pro-
gramming the M27C801. To activate the ES
mode, the programming equipment must force
11.5V to 12.5V on address line A9 of the
M27C801. Two identifier bytes may then be se-
quenced from the device outputs by toggling ad-
dress line A0 from V
IL
to V
IH
. All other address
lines must be held at V
IL
during Electronic Signa-
ture mode. Byte 0 (A0 = V
IL
) represents the man-
ufacturer code and byte 1 (A0 = V
IH
) the device
identifier code. For the STMicroelectronics
M27C801, these two identifier bytes are given in
Table 4 and can be read-out on outputs Q7 to Q0.
ERASURE OPERATION (applies to UV EPROM)
The erasure characteristics of the M27C801 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range.
Research shows that constant exposure to room
level fluorescent lighting could erase a typical
M27C801 in about 3 years, while it would take ap-
proximately 1 week to cause erasure when ex-
posed to direct sunlight. If the M27C801 is to be
exposed to these types of lighting conditions for
extended periods of time, it is suggested that
opaque labels be put over the M27C801 window to
prevent unintentional erasure. The recommended
erasure procedure for the M27C801 is exposure to
short wave ultraviolet light which has wavelength
2537 . The integrated dose (i.e. UV intensity x
exposure time) for erasure should be a minimum
of 30 W-sec/cm
2
. The erasure time with this dos-
age is approximately 30 to 40 minutes using an ul-
traviolet lamp with 12000 μW/cm
2
power rating.
The M27C801 should be placed within 2.5 cm (1
inch) of the lamp tubes during the erasure. Some
lamps have a filter on their tubes which should be
removed before erasure.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M27C801-100N1X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100N1TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100K6X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100K6TR | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
| M27C801-100K1X | 8 Mbit 1Mb x 8 UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27C801-120B1 | 功能描述:可擦除可編程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C801-120F1 | 功能描述:可擦除可編程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C801-120K1 | 功能描述:可擦除可編程ROM 8M (1Mx8) 120ns RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C801-150F1 | 功能描述:可擦除可編程ROM DIP-32 1MX8 150NS RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
| M27C801-55K1 | 功能描述:可擦除可編程ROM 8M (1Mx8) 55ns RoHS:否 制造商:Maxim Integrated 類型: 存儲(chǔ)容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-92 |
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