參數(shù)資料
型號: M27V101-100K6TR
廠商: 意法半導(dǎo)體
英文描述: 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM
中文描述: 1兆位的128KB × 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器
文件頁數(shù): 1/15頁
文件大小: 104K
代理商: M27V101-100K6TR
1/15
May 1998
M27V101
1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM
I
LOW VOLTAGE READ OPERATION:
3V to 3.6V
I
FAST ACCESS TIME: 90ns
I
LOW POWER CONSUMPTION:
– Active Current 15mA at 5MHz
– Standby Current 20
μ
A
I
PROGRAMMING VOLTAGE: 12.75V
±
0.25V
I
PROGRAMMING TIME: 100
μ
s/byte (typical)
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 05h
DESCRIPTION
The M27V101 is a low voltage 1 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessorsystems requiringlarge data or
program storage and is organized as 131,072 by 8
bits.
The M27V101 operates in the read mode with a
supply voltage as low as 3V. The decrease in op-
erating power allows either a reduction of the size
of the battery or an increase in the time between
battery recharges.
The FDIP32W (window ceramic frit-seal package)
has a transparent lid which allow the user to ex-
pose the chipto ultraviolet light to erase the bit pat-
tern.
Figure 1. Logic Diagram
AI00660B
17
A0-A16
P
Q0-Q7
VPP
VCC
M27V101
G
E
VSS
8
Table 1. Signal Names
A0-A16
Address Inputs
Q0-Q7
Data Outputs
E
Chip Enable
G
Output Enable
P
Program
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
1
32
32
1
FDIP32W (F)
PDIP32 (B)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
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