- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358995 > M27V101-100N6TR (意法半導體) 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM PDF資料下載
參數(shù)資料
| 型號： | M27V101-100N6TR |
| 廠商： | 意法半導體 |
| 英文描述： | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 1兆位的128KB × 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 104K |
| 代理商： | M27V101-100N6TR |
M27V101
6/15
Figure 5. Read Mode AC Waveforms
AI00713
tAXQX
tEHQZ
DATA OUT
A0-A16
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
Table 8B. Read Mode AC Characteristics
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 3.3V
±
10%; V
PP
= Vcc)
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Symbol
Alt
Parameter
Test Condition
M27V201
Unit
-120
-150
-200
Min
Max
Min
Max
Min
Max
t
AVQV
t
ACC
Address Valid to Output
Valid
E = V
IL
, G = V
IL
120
150
200
ns
t
ELQV
t
CE
Chip Enable Low to
Output Valid
G = V
IL
120
150
200
ns
t
GLQV
t
OE
Output Enable Low to
Output Valid
E = V
IL
50
60
90
ns
t
EHQZ(2)
t
DF
Chip Enable High to
Output Hi-Z
G = V
IL
0
40
0
50
0
70
ns
t
GHQZ(2)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
0
40
0
50
0
70
ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = VIL, G = VIL
0
0
0
ns
Programming
The M27V101 has been designed to be fully com-
patible withthe M27C1001 and hasthe same elec-
tronic signature. As a result the M27V101 can be
programmed as the M27C1001 on the same pro-
gramming equipments applying 12.75V on V
PP
and 6.25V on V
CC
by the use of the same PRES-
TO II algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27V101
are in the ’1’ state. Data is introduced by selective-
ly programming ’0’s into the desired bit locations.
Although only ’0’s will be programmed, both ’1’s
and ’0’s can be present in the data word. The only
way to change a ’0’ to a ’1’ is by die exposition to
ultraviolet light (UV EPROM). The M27V101 is in
the programming mode when V
PP
input is at
12.75V, E is at V
IL
andP is pulsed toV
IL
. The data
to be programmed is applied to 8 bits inparallel to
the data output pins. The levels required for the
address and data inputs are TTL. V
CC
is specified
to be 6.25V
±
0.25V.
相關PDF資料 |
PDF描述 |
|---|---|
| M27V101-120B1TR | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-150B1TR | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-150N6TR | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-200B1TR | CONNECTOR, PLUG 3.81MM P, 2 POS |
| M27V101-200B6TR | 1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M27V101-120B1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-120B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-120F1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-120F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27V101-120K1 | 功能描述:可擦除可編程ROM RO 511-M27W101-80K6 128KX8 可擦除可編程ROM 120NS RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
發(fā)布緊急采購，3分鐘左右您將得到回復。