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參數(shù)資料
| 型號(hào)： | M27W101-100F6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 1兆位的128KB x8低壓紫外線EPROM和檢察官辦公室存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 7/15頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | M27W101-100F6TR |
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M27W101
Table 9. Programming Mode DC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V)
Symbol
Parameter
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
Table 10. Programming Mode AC Characteristics
(1)
(T
A
= 25
°
C; V
CC
= 6.25V
±
0.25V; V
PP
= 12.75V
±
0.25V
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
V
IL
≤
V
IN
≤
V
IH
±
10
μ
A
I
CC
Supply Current
50
mA
I
PP
Program Current
E = V
IL
50
mA
V
IL
Input Low Voltage
–0.3
0.8
V
V
IH
Input High Voltage
2
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
V
OH
Output High Voltage TTL
I
OH
= –400
μ
A
2.4
V
V
ID
A9 Voltage
11.5
12.5
V
Parameter
Test Condition
Min
Max
Unit
t
AVPL
t
AS
Address Valid to Program Low
2
μ
s
t
QVPL
t
DS
Input Valid to Program Low
2
μ
s
t
VPHPL
t
VPS
VPP High to Program Low
2
μ
s
t
VCHPL
t
VCS
VCC High to Program Low
2
μ
s
t
ELPL
t
CES
Chip Enable Low to Program Low
2
μ
s
t
PLPH
t
PW
Program Pulse Width
95
105
μ
s
t
PHQX
t
DH
Program High to Input Transition
2
μ
s
t
QXGL
t
OES
Input Transition to Output Enable Low
2
μ
s
t
GLQV
t
OE
Output Enable Low to Output Valid
100
ns
t
GHQZ(2)
t
DFP
Output Enable High to Output Hi-Z
0
130
ns
t
GHAX
t
AH
Output Enable High to Address
Transition
0
ns
Programming
The M27W101 hasbeen designedto be fully com-
patible withthe M27C1001 and hasthe same elec-
tronic signature. As a result the M27W101 can be
programmed as the M27C1001 on the same pro-
gramming equipmentapplying 12.75V on V
PP
and
6.25V on V
CC
using the same PRESTO II algo-
rithm. Whendelivered (and after each ‘1’serasure
for UVEPROM), all bits of theM27W101 arein the
’1’ state. Data is introduced by selectively pro-
gramming ’0’s into the desired bit locations. Al-
though only ’0’s will be programmed, both ’1’s and
’0’s can be presentin the data word. The only way
to change a ‘0’ to a ‘1’ is by die exposure to ultra-
violet light (UV EPROM). The M27W101 is in the
programming mode when V
PP
input is at 12.75V,
E is at V
IL
and P is pulsed to V
IL
. The data to be
programmed is applied to 8 bits in parallel to the
data output pins. The levels required for the ad-
dress and data inputs are TTL. V
CC
is specified to
be 6.25V
±
0.25V.
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PDF描述 |
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| M27W101-100K6TR | 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W101-100N6TR | 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W101-120B6TR | 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W101-120F6TR | 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W101-120K6TR | 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M27W101-100K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM |
| M27W101-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM |
| M27W101-120B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM |
| M27W101-120F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM |
| M27W101-120K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM |
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