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參數(shù)資料
| 型號： | M27W256-120K6TR |
| 廠商： | 意法半導體 |
| 英文描述： | 3-Line To 8-Line Decoders/Demultiplexers 16-SO 0 to 70 |
| 中文描述： | 256千位的32KB × 8低壓紫外線可擦寫可編程只讀存儲器和OTP存儲器 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 101K |
| 代理商： | M27W256-120K6TR |
M27W256
6/15
Figure 5. Read Mode AC Waveforms
AI00758B
tAXQX
tEHQZ
A0-A14
E
G
Q0-Q7
tAVQV
tGHQZ
tGLQV
tELQV
VALID
Hi-Z
VALID
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, Eshould be decodedand used as theprima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system controlbus. This ensures that all deselect-
ed memory devices are intheir low power standby
mode andhat the output pins are only active when
data is desired from a particular memory device.
System Considerations
The power switching characteristics of Advance
CMOS EPROMs require careful decoupling of the
devices. The supply current, I
CC
, has three seg-
ments that are of interest to the system designer:
the standby current level, the active current level,
and transient current peaks that are produced by
the fallingand rising edges of E. The magnitude of
this transient current peaks is dependent on the
capacitive and inductive loading of the device at
the output. The associatedtransient voltagepeaks
can be suppressed by complying with the two line
output control and by properly selected decoupling
capacitors. It is recommended that a 0.1
μ
F ceram-
ic capacitorbe used on every device between V
CC
and V
SS
. This should be a high frequency capaci-
tor of low inherent inductance and should be
placed as close to the device as possible. In addi-
tion, a 4.7
μ
F bulk electrolytic capacitor should be
used between V
CC
and V
SS
for every eight devic-
es. The bulk capacitor should be located near the
power supply connection point. The purposeof the
bulk capacitor is to overcome the voltage drop
caused by the inductive effects of PCB traces.
相關PDF資料 |
PDF描述 |
|---|---|
| M27W400-100XK6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-120XK6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-120XB6TR | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
| M27W400-120XF6TR | Spring Contact Probe; Current Rating:5A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No |
| M27W400 | 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M27W256-120N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W256-150B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W256-150F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W256-150K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
| M27W256-150N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM |
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