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參數資料
| 型號： | M27W512-150K6TR |
| 廠商： | 意法半導體 |
| 英文描述： | 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 512千位64Kb的x8低壓紫外線EPROM和檢察官辦公室存儲器 |
| 文件頁數： | 8/21頁 |
| 文件大小： | 369K |
| 代理商： | M27W512-150K6TR |
M27W512
8/21
quenced from the device outputs by toggling ad-
dress line A0 from V
IL
to V
IH
. All other address
lines must be held at V
IL
during Electronic Signa-
ture mode. Byte 0 (A0 = V
IL
) represents the man-
ufacturer code and byte 1 (A0 = V
IH
) the device
identifier code. For the STMicroelectronics
M27W512, these two identifier bytes are given in
Table 3.
and can be read-out on outputs Q7 to Q0.
Note that the M27W512 and M27C512 have the
same identifier byte.
ERASURE OPERATION (APPLIES FOR UV EPROM)
The erasure characteristics of the M27W512 is
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 . It should be noted that
sunlight and some type of fluorescent lamps have
wavelengths in the 3000-4000 range.
Research shows that constant exposure to room
level fluorescent lighting could erase a typical
M27W512 in about 3 years, while it would take ap-
proximately 1 week to cause erasure when ex-
posed to direct sunlight. If the M27W512 is to be
exposed to these types of lighting conditions for
extended periods of time, it is suggested that
opaque labels be put over the M27W512 window
to prevent unintentional erasure. The recommend-
ed erasure procedure for the M27W512 is expo-
sure to short wave ultraviolet light which has
wavelength 2537 . The integrated dose (i.e. UV
intensity x exposure time) for erasure should be a
minimum of 15 W-sec/cm
2
. The erasure time with
this dosage is approximately 15 to 20 minutes us-
ing an ultraviolet lamp with 12000 μW/cm
2
power
rating. The M27W512 should be placed within 2.5
cm (1 inch) of the lamp tubes during the erasure.
Some lamps have a filter on their tubes which
should be removed before erasure.
相關PDF資料 |
PDF描述 |
|---|---|
| M27W512-150N6 | 512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
| M27W512-150N6E | Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70 |
| M27W512-150N6F | Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70 |
| M27W512-150N6TR | Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70 |
| M27W512-200B6 | Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M27W512-150N6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
| M27W512-150N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
| M27W512-150N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
| M27W512-150N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM |
| M27W512-200B6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
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