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參數(shù)資料
| 型號： | M27W800 |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| 中文描述： | 8兆1兆× 8或512KB × 16低壓紫外線存儲器和OTP存儲器 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 140K |
| 代理商： | M27W800 |
1/15
March 2000
M27W800
8 Mbit (1Mb x 8 or 512Kb x 16)
Low Voltage UV EPROM and OTP EPROM
I
2.7V to 3.6V LOW VOLTAGE in READ
OPERATION
I
ACCESS TIME:
– 90ns at V
CC
= 3.0V to 3.6V
– 100ns at V
CC
= 2.7V to 3.6V
I
BYTE-WIDE or WORD-WIDE
CONFIGURABLE
I
8 Mbit MASK ROM REPLACEMENT
I
LOW POWER CONSUMPTION
– Active Current 30mA at 8MHz
– Standby Current 15μA
I
PROGRAMMING VOLTAGE: 12.5V ± 0.25V
I
PROGRAMMING TIME: 50μs/word
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: B2h
DESCRIPTION
The M27W800 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 1 Mbit
words of 8 bit or 512 Kbit words of 16 bit. The pin-
out is compatible with a 8 Mbit Mask ROM.
The M27W800 operates in the read mode with a
supply voltage as low as 2.7V. The decrease in
operating power allows either a reduction of the
size of the battery or an increase in the time be-
tween battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27W800 is offered in PDIP42 and PLCC44 pack-
age.
1
42
1
42
FDIP42W (F)
PDIP42 (B)
PLCC44 (K)
Figure 1. Logic Diagram
AI03601
19
A0-A18
BYTEVPP
Q0-Q14
VCC
M27W800
G
E
VSS
15
Q15A–1
相關PDF資料 |
PDF描述 |
|---|---|
| M27W800-100B6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150K6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150F6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-150B6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120K6TR | 8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M27W800-100B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-100F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-100K6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120B6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
| M27W800-120F6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM |
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