參數(shù)資料
型號(hào): M28C16-300MS6T
廠商: 意法半導(dǎo)體
元件分類: EEPROM
英文描述: 16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION
中文描述: 16K的(2K × 8)低電壓并聯(lián)EEPROM,帶有軟件數(shù)據(jù)保護(hù)
文件頁(yè)數(shù): 6/17頁(yè)
文件大小: 123K
代理商: M28C16-300MS6T
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
Note:
1. Sampled only, not 100% tested.
Table 5. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz )
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
10
μ
A
I
LO
Output Leakage Current
0V
V
IN
V
CC
10
μ
A
I
CC(1)
Supply Current
(CMOS inputs)
E = V
IL
, G = V
IL
, f = 5 MHz, V
CC
= 3.3V
8
mA
E = V
IL
, G = V
IL
, f = 5 MHz, V
CC
= 3.6V
10
mA
I
CC2(1)
Supply Current (Standby)
CMOS
E > V
CC
–0.3V
50
μ
A
V
IL
Input Low Voltage
– 0.3
0.6
V
V
IH
Input High Voltage
2
V
CC
+0.5
V
V
OL
Output Low Voltage
I
OL
= 1 mA
0.2 V
CC
V
V
OH
Output High Voltage
I
OH
= 1 mA
0.8 V
CC
V
Note:
1. All I/O’s open circuit.
Table 6. Read Mode DC Characteristics
(T
A
= 0 to70
°
C or –40to 85
°
C; V
CC
= 2.7V to 3.6V)
Symbol
Parameter
Min
Max
Unit
t
PUR
Time Delay to Read Operation
1
μ
s
t
PUW
Time Delay to Write Operation
10
ms
V
WI
Write Inhibit Threshold
1.5
2.5
V
Note:
1. Sampled only, not 100% tested.
Table 7. Power Up Timing
(1)
(T
A
= 0 to 70
°
C or –40 to 85
°
C; V
CC
= 2.7V to 3.6V)
Input Rise and Fall Times
20ns
Input Pulse Voltages
0V to V
CC
-0.3V
Input and Output Timing Ref.
Voltages
1.5V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Table 4. ACMeasurement Conditions
AI01274
VCC–0.3V
0V
0.5 VCC
Figure7. AC Testing Input Output Waveforms
AI01396
VCC
OUT
CL= 100pF
CLincludes JIG capacitance
1.8k
DEVICE
UNDER
TEST
1.3k
Figure 8. AC Testing EquivalentLoad Circuit
6/17
M28LV16
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