參數(shù)資料
型號: M28R400CTB90ZB6T
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
中文描述: 4兆位(256Kb的x16插槽,引導(dǎo)塊)1.8V電源快閃記憶體
文件頁數(shù): 16/50頁
文件大?。?/td> 755K
代理商: M28R400CTB90ZB6T
23/50
Figure 8. Read AC Waveforms
Table 15. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Symbol
Alt
Parameter
M28R400C
Unit
90
120
tAVAV
tRC
Address Valid to Next Address Valid
Min
90
120
ns
tAVQV
tACC
Address Valid to Output Valid
Max
90
120
ns
tAXQX
(1)
tOH
Address Transition to Output Transition
Min
0
ns
tEHQX
(1)
tOH
Chip Enable High to Output Transition
Min
0
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output Hi-Z
Max
25
30
ns
tELQV
(2)
tCE
Chip Enable Low to Output Valid
Max
90
120
ns
tELQX
(1)
tLZ
Chip Enable Low to Output Transition
Min
0
ns
tGHQX
(1)
tOH
Output Enable High to Output Transition
Min
0
ns
tGHQZ
(1)
tDF
Output Enable High to Output Hi-Z
Max
25
30
ns
tGLQV
(2)
tOE
Output Enable Low to Output Valid
Max
30
35
ns
tGLQX
(1)
tOLZ
Output Enable Low to Output Transition
Min
0
ns
DQ0-DQ15
AI04144b
VALID
A0-A17
E
tAXQX
tAVAV
VALID
tAVQV
tELQV
tELQX
tGLQV
tGLQX
ADDR. VALID
CHIP ENABLE
OUTPUTS
ENABLED
DATA VALID
STANDBY
G
tGHQX
tGHQZ
tEHQX
tEHQZ
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