參數(shù)資料
型號: M28W160BB100N6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 23/50頁
文件大小: 860K
代理商: M28W160BB100N6T
23/50
M28W160ECT, M28W160ECB
Figure 9. Read Mode AC Waveforms
Table 15. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
Symbol
Alt
Parameter
M28W160EC
Unit
70
85
90
100
t
AVAV
t
RC
Address Valid to Next Address Valid
Min
70
85
90
100
ns
t
AVQV
t
ACC
Address Valid to Output Valid
Max
70
85
90
100
ns
t
AXQX
(1)
t
OH
Address Transition to Output Transition
Min
0
0
0
0
ns
t
EHQX
(1)
t
OH
Chip Enable High to Output Transition
Min
0
0
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
Max
20
20
25
30
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
Max
70
85
90
100
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
Min
0
0
0
0
ns
t
GHQX
(1)
t
OH
Output Enable High to Output Transition
Min
0
0
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
Max
20
20
25
30
ns
t
GLQV
(2)
t
OE
Output Enable Low to Output Valid
Max
20
20
30
35
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to Output Transition
Min
0
0
0
0
ns
DQ0-DQ15
AI03813b
VALID
A0-A19
E
tAXQX
tAVAV
VALID
tAVQV
tELQV
tELQX
tGLQV
tGLQX
ADDR. VALID
CHIP ENABLE
OUTPUTS
ENABLED
DATA VALID
STANDBY
G
tGHQX
tGHQZ
tEHQX
tEHQZ
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