參數資料
型號: M28W160BT100N6T
廠商: 意法半導體
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引導塊)3V電源快閃記憶體
文件頁數: 46/50頁
文件大小: 860K
代理商: M28W160BT100N6T
M28W160ECT, M28W160ECB
46/50
Figure 23. Protection Register Program Flowchart and Pseudo Code
Note: 1. Status check of b1 (Protected Block), b3 (V
PP
Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
Write C0h
AI04381
Start
Write Address
& Data
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
protection_register_program_command (addressToProgram, dataToProgram) {:
writeToFlash (any_address, 0xC0) ;
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
} while (status_register.b7== 0) ;
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
YES
End
YES
NO
b1 = 0
Program to Protected
Block Error (1, 2)
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
if (status_register.b4==1) /*program error */
error_handler ( ) ;
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
}
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