參數(shù)資料
型號: M28W160BTT100GB6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory
中文描述: 16兆1兆x16插槽,低電壓啟動座快閃記憶體
文件頁數(shù): 27/50頁
文件大小: 860K
代理商: M28W160BTT100GB6T
27/50
M28W160ECT, M28W160ECB
Table 17. Write AC Characteristics, Chip Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. Applicable if V
PP
is seen as a logic input (V
PP
< 3.6V).
Symbol
Alt
Parameter
M28W160EC
Unit
70
85
90
100
t
AVAV
t
WC
Write Cycle Time
Min
70
85
90
100
ns
t
AVEH
t
AS
Address Valid to Chip Enable High
Min
45
45
50
50
ns
t
DVEH
t
DS
Data Valid to Chip Enable High
Min
45
45
50
50
ns
t
EHAX
t
AH
Chip Enable High to Address
Transition
Min
0
0
0
0
ns
t
EHDX
t
DH
Chip Enable High to Data Transition
Min
0
0
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
Min
25
25
30
30
ns
t
EHGL
Chip Enable High to Output Enable
Low
Min
25
25
30
30
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
Min
0
0
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
Min
45
45
50
50
ns
t
ELQV
Chip Enable Low to Output Valid
Min
70
85
90
100
ns
t
QVVPL
(1,2)
Output Valid to V
PP
Low
Min
0
0
0
0
ns
t
QVWPL
Data Valid to Write Protect Low
Min
0
0
0
0
ns
t
VPHEH
(1)
t
VPS
V
PP
High to Chip Enable High
Min
200
200
200
200
ns
t
WLEL
t
CS
Write Enable Low to Chip Enable Low
Min
0
0
0
0
ns
t
WPHEH
Write Protect High to Chip Enable High
Min
45
45
50
50
ns
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