參數(shù)資料
型號: M28W160BTT100N1T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory
中文描述: 16兆1兆x16插槽,低電壓啟動座快閃記憶體
文件頁數(shù): 37/50頁
文件大?。?/td> 860K
代理商: M28W160BTT100N1T
37/50
M28W160ECT, M28W160ECB
Table 28. Device Geometry Definition
Offset Word
Mode
Data
Description
Value
27h
0015h
Device Size = 2
n
in number of bytes
2 MByte
28h
29h
0001h
0000h
Flash Device Interface Code description
x16
Async.
2Ah
2Bh
0002h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
4
2Ch
0002h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2
M
2Dh
2Eh
001Eh
0000h
Region 1 Information
Number of identical-size erase block = 001Eh+1
31
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 KByte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
8
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
M
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
8
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
31h
32h
001Eh
0000h
Region 2 Information
Number of identical-size erase block = 001Eh+1
31
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
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