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參數(shù)資料
| 型號： | M28W160BTT90GB1T |
| 廠商： | 意法半導體 |
| 英文描述： | 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |
| 中文描述： | 16兆1兆x16插槽，低電壓啟動座快閃記憶體 |
| 文件頁數(shù)： | 13/50頁 |
| 文件大?。?/td> | 860K |
| 代理商： | M28W160BTT90GB1T |
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13/50
M28W160ECT, M28W160ECB
Register error. The protection of the Protection
Register and/or the Security Block is not revers-
ible.
The Protection Register Program cannot be sus-
pended.
See
APPENDIX
23., Protection Register Program Flowchart and
Pseudo Code
, for the flowchart for using the Pro-
tection Register Program command.
Block Lock Command
The Block Lock command is used to lock a block
and prevent Program or Erase operations from
changing the data in it. All blocks are locked at
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
The first bus cycle sets up the Block Lock
command.
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 9.
shows the protection status after issuing
a Block Lock command.
The Block Lock bits are volatile, once set they re-
main set until a hardware reset or power-down/
power-up. They are cleared by a Blocks Unlock
command. Refer to the section, Block Locking, for
a detailed explanation.
Block Unlock Command
The Blocks Unlock command is used to unlock a
block, allowing the block to be programmed or
C.
,
Figure
■
■
erased. Two Bus Write cycles are required to is-
sue the Blocks Unlock command.
The first bus cycle sets up the Block Unlock
command.
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 9.
shows the protection status after issuing
a Block Unlock command. Refer to the section,
Block Locking, for a detailed explanation.
Block Lock-Down Command
A locked block cannot be Programmed or Erased,
or have its protection status changed when WP is
low, V
IL
. When WP is high, V
IH,
the Lock-Down
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock com-
mand.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
The first bus cycle sets up the Block Lock
command.
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down.
Table 9.
shows the protection status
after issuing a Block Lock-Down command. Refer
to the section, Block Locking, for a detailed expla-
nation.
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相關PDF資料 |
PDF描述 |
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| M28W160BTT90GB6T | 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |
| M28W160BTT90N1T | 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |
| M28W160BTT90N6T | 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |
| M28W160BB90N1T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160BB90N6T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M28W160BTT90GB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |
| M28W160BTT90N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |
| M28W160BTT90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory |
| M28W160B-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160CB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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