參數(shù)資料
型號(hào): M28W160CB85N1T
廠(chǎng)商: 意法半導(dǎo)體
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁(yè)數(shù): 25/50頁(yè)
文件大?。?/td> 860K
代理商: M28W160CB85N1T
25/50
M28W160ECT, M28W160ECB
Table 16. Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. Applicable if V
PP
is seen as a logic input (V
PP
< 3.6V).
Symbol
Alt
Parameter
M28W160EC
Unit
70
85
90
100
t
AVAV
t
WC
Write Cycle Time
Min
70
85
90
100
ns
t
AVWH
t
AS
Address Valid to Write Enable High
Min
45
45
50
50
ns
t
DVWH
t
DS
Data Valid to Write Enable High
Min
45
45
50
50
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
0
0
ns
t
ELQV
Chip Enable Low to Output Valid
Min
70
85
90
100
ns
t
QVVPL
(1,2)
Output Valid to V
PP
Low
Min
0
0
0
0
ns
t
QVWPL
Output Valid to Write Protect Low
Min
0
0
0
0
ns
t
VPHWH
(1)
t
VPS
V
PP
High to Write Enable High
Min
200
200
200
200
ns
t
WHAX
t
AH
Write Enable High to Address Transition
Min
0
0
0
0
ns
t
WHDX
t
DH
Write Enable High to Data Transition
Min
0
0
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
0
0
ns
t
WHEL
Write Enable High to Chip Enable Low
Min
25
25
30
30
ns
t
WHGL
Write Enable High to Output Enable Low
Min
20
20
30
30
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
25
25
30
30
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
45
45
50
50
ns
t
WPHWH
Write Protect High to Write Enable High
Min
45
45
50
50
ns
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