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參數(shù)資料
| 型號： | M28W160ECB70ZB6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 19/50頁 |
| 文件大?。?/td> | 860K |
| 代理商： | M28W160ECB70ZB6F |
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19/50
M28W160ECT, M28W160ECB
gram/Erase Controller Status bit is High (Program/
Erase Controller inactive). Bit 2 is set within 5μs of
the Program/Erase Suspend command being is-
sued therefore the memory may still complete the
operation rather than entering the Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status (Bit 1).
The Block Pro-
tection Status bit can be used to identify if a Pro-
gram or Erase operation has tried to modify the
contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been at-
tempted on a locked block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the
new
command
Reserved (Bit 0).
Bit 0 of the Status Register is
reserved. Its value must be masked.
Note: Refer to
APPENDIX C.
, Flowcharts and
Pseudo Codes, for using the Status Register.
will
appear
to
fail.
Table 10. Status Register Bits
Note: Logic level '1' is High, '0' is Low.
Bit
Name
Logic Level
Definition
7
P/E.C. Status
'1'
Ready
'0'
Busy
6
Erase Suspend Status
'1'
Suspended
'0'
In progress or Completed
5
Erase Status
'1'
Erase Error
'0'
Erase Success
4
Program Status
'1'
Program Error
'0'
Program Success
3
V
PP
Status
'1'
V
PP
Invalid, Abort
'0'
V
PP
OK
2
Program Suspend Status
'1'
Suspended
'0'
In Progress or Completed
1
Block Protection Status
'1'
Program/Erase on protected Block, Abort
'0'
No operation to protected blocks
0
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M28W160ECB70ZB6S | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB70ZB6T | Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V |
| M28W160ECB70ZB6U | TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V |
| M28W160ECB85N1E | TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V |
| M28W160ECB85N1F | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M28W160ECB70ZB6S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB70ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB70ZB6U | 制造商:Micron Technology Inc 功能描述:16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY - Tape and Reel |
| M28W160ECB70ZB6U TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS 46TFBGA |
| M28W160ECB85N1 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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