參數(shù)資料
型號(hào)： M28W160ECB70ZB6S
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述： 16兆位（1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體
文件頁數(shù)： 36/50頁
文件大小： 860K
代理商： M28W160ECB70ZB6S
M28W160ECT, M28W160ECB
36/50
Table 27. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
0036h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
00B4h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.4V
1Eh
00C6h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2
n
μs
16μs
20h
0004h
Typical time-out for Double Word Program = 2
n
μs
16μs
21h
000Ah
Typical time-out per individual block erase = 2
n
ms
1s
22h
0000h
Typical time-out for full chip erase = 2
n
ms
NA
23h
0005h
Maximum time-out for word program = 2
n
times typical
512μs
24h
0005h
Maximum time-out for Double Word Program = 2
n
times typical
512μs
25h
0003h
Maximum time-out per individual block erase = 2
n
times typical
8s
26h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
相關(guān)PDF資料
PDF描述
M28W160ECB70ZB6T Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 22 nC; R<sub>DS(on)</sub>: 3@10V4@5V4.4@4.5V mOhm; Thermal Resistance: 0.59 K/W; V<sub>DS</sub>max: 30 V
M28W160ECB70ZB6U TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 56 nC; R<sub>DS(on)</sub>: 4@10V4.4@5V5.9@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 40 V
M28W160ECB85N1E TrenchMOS (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 50 nC; R<sub>DS(on)</sub>: 5.8@10V6.3@5V6.7@4.5V mOhm; Thermal Resistance: 0.5 K/W; V<sub>DS</sub>max: 55 V
M28W160ECB85N1F 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB85N1S 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28W160ECB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB70ZB6U 制造商:Micron Technology Inc 功能描述:16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY - Tape and Reel
M28W160ECB70ZB6U TR 制造商:Micron Technology Inc 功能描述:IC FLASH 16MBIT 70NS 46TFBGA
M28W160ECB85N1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
M28W160ECB85N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
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