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參數(shù)資料
| 型號： | M28W160ECB90N1E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 16兆位（1兆x16插槽，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 38/50頁 |
| 文件大?。?/td> | 860K |
| 代理商： | M28W160ECB90N1E |
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M28W160ECT, M28W160ECB
38/50
Table 29. Primary Algorithm-Specific Extended Query Table
Note: 1. See
Table 26.
, offset 15 for P pointer definition.
Offset
P = 35h
(1)
Data
Description
Value
(P+0)h = 35h
0050h
Primary Algorithm extended Query table unique ASCII string “PRI”
"P"
(P+1)h = 36h
0052h
"R"
(P+2)h = 37h
0049h
"I"
(P+3)h = 38h
0031h
Major version number, ASCII
"1"
(P+4)h = 39h
0030h
Minor version number, ASCII
"0"
(P+5)h = 3Ah
0066h
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0Chip Erase supported(1 = Yes, 0 = No)
bit 1Suspend Erase supported(1 = Yes, 0 = No)
bit 2Suspend Program supported(1 = Yes, 0 = No)
bit 3Legacy Lock/Unlock supported(1 = Yes, 0 = No)
bit 4Queued Erase supported(1 = Yes, 0 = No)
bit 5Instant individual block locking supported(1 = Yes, 0 = No)
bit 6Protection bits supported(1 = Yes, 0 = No)
bit 7Page mode read supported(1 = Yes, 0 = No)
bit 8Synchronous read supported(1 = Yes, 0 = No)
bit 31 to 9Reserved; undefined bits are ‘0’
No
Yes
Yes
No
No
Yes
Yes
No
No
(P+6)h = 3Bh
0000h
(P+7)h = 3Ch
0000h
(P+8)h = 3Dh
0000h
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0Program supported after Erase Suspend (1 = Yes, 0 = No)
bit 7 to 1Reserved; undefined bits are ‘0’
Yes
(P+A)h = 3Fh
0003h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
Address (P+A)h contains less significant byte
bit 0Block Lock Status Register Lock/Unlock bit active(1 = Yes, 0 = No)
bit 1Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2Reserved for future use; undefined bits are ‘0’
Yes
Yes
(P+B)h = 40h
0000h
(P+C)h = 41h
0030h
V
DD
Logic Supply Optimum Program/Erase voltage (highest performance)
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
3V
(P+D)h = 42h
00C0h
V
PP
Supply Optimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12V
(P+E)h = 43h
0001h
Number of Protection register fields in JEDEC ID space.
"00h," indicates that 256 protection bytes are available
01
(P+F)h = 44h
0080h
Protection Field 1: Protection Description
This field describes user-available. One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device unique
serial numbers. Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte.
The following bytes are factory pre-programmed and user-programmable.
bit 0 to 7 Lock/bytes JEDEC-plane physical low address
bit 8 to 15Lock/bytes JEDEC-plane physical high address
bit 16 to 23 "n" such that 2
n
= factory pre-programmed bytes
bit 24 to 31 "n" such that 2
n
= user programmable bytes
80h
(P+10)h = 45h
0000h
00h
(P+11)h = 46h
0003h
8 Byte
(P+12)h = 47h
0003h
8 Byte
(P+13)h = 48h
Reserved
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| M28W160ECB90N1S | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB90N1T | 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M28W160ECB90N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB90N1S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB90N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB90N1U | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
| M28W160ECB90N6 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory |
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