參數(shù)資料
型號： M28W320ECB10N6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 6/53頁
文件大?。?/td> 832K
代理商： M28W320ECB10N6F
14/53
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 10 shows the protection sta-
tus after issuing a Block Lock-Down command.
Refer to the section, Block Locking, for a detailed
explanation.
Table 4. Commands
Note: 1. X = Don’t Care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ID=Identifier (Manufacture and Device Code),
QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program Data, PRA=Protection Register Ad-
dress, PRD=Protection Register Data.
2. The signature addresses are listed in Tables 5, 6 and 7.
3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.
4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
5. 55h is reserved.
6. To be characterized.
Commands
Cycles
Bus Write Operations
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
Op. Add Data
Op.
Add Data Op.
Add Data
Op. Add Data
Read Memory
Array
1+ Write
X
FFh
Read
RA
RD
Read Status
Register
1+ Write
X
70h
Read
X
SRD
Signature
1+ Write
X
90h
Read SA(2)
IDh
Read CFI Query
1+ Write
X
98h
Read
QA
QD
Erase
2
Write
X
20h
Write
BA
D0h
Program
2
Write
X
40h
or
10h
Write
PA
PD
Double Word
Program(3)
3
Write
X
30h
Write
PA1
PD1
Write
PA2
PD2
Quadruple Word
Program(4)
5Write
X
56h(6) Write
PA1
PD1
Write
PA2
PD2
Write
PA3
PD3 Write
PA4
PD4
Clear Status
Register
1
Write
X
50h
Program/Erase
Suspend
1Write
X
B0h
Program/Erase
Resume
1Write
X
D0h
Block Lock
2
Write
X
60h
Write
BA
01h
Block Unlock
2
Write
X
60h
Write
BA
D0h
Block Lock-Down
2
Write
X
60h
Write
BA
2Fh
Protection
Register Program
2
Write
X
C0h
Write
PRA
PRD
相關PDF資料
PDF描述
M28W320ECT85N6 2M X 16 FLASH 3V PROM, 85 ns, PDSO48
M28W320ECT90ZB6 2M X 16 FLASH 3V PROM, 90 ns, PBGA47
M28W320ECT70N6 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
M28W320ECB10N1F 2M X 16 FLASH 3V PROM, 100 ns, PDSO48
M28W640ECT70ZB6T 4M X 16 FLASH 3V PROM, 70 ns, PBGA48
相關代理商/技術參數(shù)
參數(shù)描述
M28W320ECB70ZB6 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 70NS 47TFBGA - Trays
M28W320ECB70ZB6T 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W320ECT70ZB6 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W320ECT70ZB6T 功能描述:閃存 32M (2Mx16) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W320FCB70N6E 功能描述:閃存 STD FLASH 32 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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