參數(shù)資料
型號(hào)： M28W640FCT10N6
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù)： 6/55頁
文件大?。?/td> 1141K
代理商： M28W640FCT10N6
M28W640FCT, M28W640FCB
14/55
locked-down) state when the device is reset on
power-down. Table 10. shows the protection sta-
tus after issuing a Block Lock-Down command.
Refer to the section, Block Locking, for a detailed
explanation.
Table 4. Commands
Note: 1. X = Don't Care, RA=Read Address, RD=Read Data, SRD=Status Register Data, ID=Identifier (Manufacture and Device Code),
QA=Query Address, QD=Query Data, BA=Block Address, PA=Program Address, PD=Program Data, PRA=Protection Register Ad-
dress, PRD=Protection Register Data.
2. The signature addresses are listed in Tables 5, 6 and 7.
3. Program Addresses 1 and 2 must be consecutive Addresses differing only for A0.
4. Program Addresses 1,2,3 and 4 must be consecutive Addresses differing only for A0 and A1.
Table 5. Read Electronic Signature
Note:
RP = VIH.
Commands
Cy
cl
es
Bus Write Operations
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
Op. Add
Data
Op. Add
Data
Op.
Add Data
Op.
Add Data
Op. Add Data
Read Memory
Array
1+ Write
X
FFh
Read
RA
RD
Read Status
Register
1+ Write
X
70h
Read
X
SRD
Read Electronic
Signature
1+ Write
X
90h
Read SA(2)
IDh
Read CFI Query
1+ Write
X
98h
Read
QA
QD
Erase
2
WriteX
20hWrite
BA
D0h
Program
2
Write
X
40h or
10h
Write
PA
PD
Double Word
Program(3)
3
Write
X
30h
Write
PA1
PD1
Write
PA2
PD2
Quadruple Word
Program(4)
5
Write
X
56h
Write
PA1
PD1
Write
PA2
PD2
Write
PA3
PD3 Write
PA4
PD4
Clear Status
Register
1Write
X
50h
Program/Erase
Suspend
1Write
X
B0h
Program/Erase
Resume
1Write
X
D0h
Block Lock
2
Write
X
60h
Write
BA
01h
Block Unlock
2
Write
X
60h
Write
BA
D0h
Block Lock-Down
2
Write
X
60h
Write
BA
2Fh
Protection
Register Program
2Write
X
C0h
Write
PRA
PRD
Code
Device
E
G
W
A0
A1
A2-A7
A8-A21
DQ0-DQ7
DQ8-DQ15
Manufacture
Code
VIL
VIH
VIL
0
Don't Care
20h
00h
Device Code
M28W640FCT
VIL
VIH
VIL
0
Don't Care
48h
88h
M28W640FCB
VIL
VIH
VIL
0
Don't Care
49h
88h
相關(guān)PDF資料
PDF描述
M28W640FCT85ZB1 4M X 16 FLASH 3V PROM, 85 ns, PBGA48
M28W800B100N1T 512K X 16 FLASH 3V PROM, 100 ns, PDSO48
M293 EPM 32 ELECTRONIC PROGRAM MEMORY FOR 32 STATIONS
M29DW324DT90ZA6F 2M X 16 FLASH 3V PROM, 90 ns, PBGA63
M29DW640F70N6F 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M28W640FCT70N6E 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W640FCT70N6F 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W640FCT70ZB6E 功能描述:閃存 STD FLASH 64 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M28W640FSB70ZA6E 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Trays
M28W640FSB70ZA6F 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Tape and Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*