參數(shù)資料
型號： M295V400T-55N6R
廠商： 意法半導體
英文描述： 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
中文描述： 4兆位512KB的x8或256Kb的x16插槽，啟動座單電源閃存
文件頁數(shù)： 24/34頁
文件大小： 231K
代理商： M295V400T-55N6R
Symbol
Parameter
M29F400T / M29F400B
Unit
-55
-70
High Speed
Interface
Standard
Interface
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid (Program, W Controlled)
10
2400
10
2400
μ
s
Write Enable High to DQ7 Valid (Chip Erase, WControlled)
1.0
30
1.0
30
sec
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid (Chip Erase, E Controlled)
1.0
30
1.0
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
30
30
ns
t
WHQV
Write Enable High to OutputValid (Program)
10
2400
10
2400
μ
s
Write Enable High to OutputValid (Chip Erase)
1.0
30
1.0
30
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Note:
1. All other timings are defined in ReadAC Characteristics table.
Table 17A. Data Polling and Toggle Bit ACCharacteristics
(1)
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Symbol
Parameter
M29F400T / M29F400B
Unit
-90
-120
Standard
Interface
Standard
Interface
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid (Program, W Controlled)
10
2400
10
2400
μ
s
Write Enable High to DQ7 Valid (Chip Erase, WControlled)
1.0
30
1.0
30
sec
t
EHQ7V
Chip Enable High to DQ7 Valid (Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid (Chip Erase, E Controlled)
1.0
30
1.0
30
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
35
50
ns
t
WHQV
Write Enable High to OutputValid (Program)
10
2400
10
2400
μ
s
Write Enable High to OutputValid (Chip Erase)
1.0
30
1.0
30
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
30
1.0
30
sec
Note:
1. All other timings are defined in ReadAC Characteristics table.
Table 17B. Data Polling and Toggle Bit ACCharacteristics
(1)
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
24/34
M29F400T, M29F400B
相關PDF資料
PDF描述
M295V800AB90M1T Circular Connector; No. of Contacts:37; Series:JT02R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:14-35
M29DW128F60NF1 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1E 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1F 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
M29DW128F60NF1T 128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M295V400T-55N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M295V400T-70M1R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M295V400T-70M1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M295V400T-70M3R 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
M295V400T-70M3TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*