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參數(shù)資料
| 型號(hào)： | M29DW640D70N1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| 中文描述： | 64兆位（8兆x8或4Mb的x16插槽，多行，頁(yè)，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 29/56頁(yè) |
| 文件大?。?/td> | 942K |
| 代理商： | M29DW640D70N1 |
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M29DW640D
Table 14. DC Characteristics
Note: 1. Sampled only, not 100% tested.
2. In Dual operations the Supply Current will be the sum of
I
CC1
(read) and
I
CC3
(program/erase).
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±1
μ
A
I
CC1(2)
Supply Current (Read)
E = V
IL
, G = V
IH
,
f = 6MHz
10
mA
I
CC2
Supply Current (Standby)
E = V
CC
±0.2V,
RP = V
CC
±0.2V
100
μ
A
I
CC3
(1,2)
Supply Current (Program/
Erase)
Program/Erase
Controller active
V
PP
/WP =
V
IL
or V
IH
20
mA
V
PP
/WP = V
PP
20
mA
V
IL
Input Low Voltage
0.8
V
V
IH
Input High Voltage
0.7V
CC
V
CC
+0.3
V
V
PP
Voltage for
V
PP
/WP
Program
Acceleration
V
CC
= 2.7V ±10%
11.5
12.5
V
I
PP
Current for
V
PP
/WP
Program
Acceleration
V
CC
=2.7V ±10%
15
mA
V
OL
Output Low Voltage
I
OL
= 1.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100
μ
A
V
CC
–0.4
V
V
ID
Identification Voltage
11.5
12.5
V
V
LKO
Program/Erase Lockout Supply
Voltage
1.8
2.3
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29DW640D70N1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory |
| M29DW640D70N6 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 70NS 48TSOP - Trays |
| M29DW640D70N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:FLASH NOR HIGH DENSITY & CONSUMER |
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