參數資料
型號： M29DW640F70N6F
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
文件頁數： 18/74頁
文件大小： 556K
代理商： M29DW640F70N6F
M29DW640F
Command interface
4.1.10
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final Write operation latches
the address and data in the internal state machine and starts the Program/Erase Controller.
Programming can be suspended and then resumed by issuing a Program Suspend
command and a Program Resume command, respectively (see Section 4.1.8: Program
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
After programming has started, Bus Read operations in the Bank being programmed output
the Status Register content, while Bus Read operations to the other Bank output the
contents of the memory array. See the section on the Status Register for more details.
Typical program times are given in Table 8.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs Bus Read operations to the Bank where the
command was issued will continue to output the Status Register. A Read/Reset command
must be issued to reset the error condition and return to Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
4.2
Fast Program commands
There are five Fast Program commands available to improve the programming throughput,
by writing several adjacent Words or Bytes in parallel.
When VPPH is applied to the VPP/Write Protect pin the memory automatically enters the Fast
Program mode. The user can then choose to issue any of the Fast Program commands.
Care must be taken because applying a VPPH to the VPP/WP pin will temporarily unprotect
any protected block. Fast programming should not be attempted when VPP is not at VPPH.
4.2.1
Double Word Program
command
This is used to write two adjacent Words in x16 mode, in parallel. The addresses of the two
Words must differ only in A0.
Three bus write cycles are necessary to issue the command.
1.
The first bus cycle sets up the command.
2.
The second bus cycle latches the Address and the Data of the first Word to be written.
3.
The third bus cycle latches the Address and the Data of the second Word to be written
and starts the Program/Erase Controller.
相關PDF資料
PDF描述
M29F002BB120K1 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
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相關代理商/技術參數
參數描述
M29DW640F70N6T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1E 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1F 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
M29DW640F70ZE1T 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
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