參數(shù)資料
型號: M29F016D55M6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
中文描述: 16兆位(含2Mb × 8,統(tǒng)一座)5V電源快閃記憶體
文件頁數(shù): 17/37頁
文件大?。?/td> 536K
代理商: M29F016D55M6T
17/37
M29F016D
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 7, Operating and
AC Measurement Conditions. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 7. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Table 8. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
M29F016D
Unit
55
70/ 90
Min
Max
Min
Max
V
CC
Supply Voltage
4.5
5.5
4.5
5.5
V
Ambient Operating Temperature
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
30
100
pF
Input Rise and Fall Times
10
10
ns
Input Pulse Voltages
0 to 3
0.45 to 2.4
V
Input and Output Timing Ref. Voltages
1.5
0.8 and 2.0
V
AI05276
3V
High Speed (55ns)
0V
1.5V
2.4V
Standard (70, 90ns)
0.45V
2.0V
0.8V
AI05277
1.3V
OUT
CL
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
VCC
0.1μF
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
12
pF
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