參數(shù)資料
型號(hào): M29F016D70N1T
廠商: 意法半導(dǎo)體
英文描述: Excalibur JFET-Input High-Output-Drive uPower Quad Operational Amplifier 14-SOIC
中文描述: 16兆位(含2Mb × 8,統(tǒng)一座)5V電源快閃記憶體
文件頁(yè)數(shù): 28/37頁(yè)
文件大?。?/td> 536K
代理商: M29F016D70N1T
M29F016D
28/37
Table 18. CFI Query System Interface Information
Note: 1. Not supported in the CFI
Address
Data
Description
Value
1Bh
45h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
4.5V
1Ch
55h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
5.5V
1Dh
00h
V
PP
[Programming] Supply Minimum Program/Erase voltage
00h not supported
NA
1Eh
00h
V
PP
[Programming] Supply Maximum Program/Erase voltage
00h not supported
NA
1Fh
04h
Typical timeout per single byte program = 2
n
μs
16μs
20h
00h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
0Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
00h
Typical timeout for full chip erase = 2
n
ms
see note (1)
23h
04h
Maximum timeout for byte program = 2
n
times typical
256μs
24h
00h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
03h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
00h
Maximum timeout for chip erase = 2
n
times typical
see note (1)
相關(guān)PDF資料
PDF描述
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