參數(shù)資料
型號: M29F016D
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 16兆位(2米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 29/37頁
文件大小: 536K
代理商: M29F016D
29/37
M29F016D
Table 19. Device Geometry Definition
Address
Data
Description
Value
27h
15h
Device Size = 2
n
in number of bytes
2 MByte
28h
29h
00h
00h
Flash Device Interface Code description
x8 only
Async.
2Ah
2Bh
00h
00h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
01h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
1
2Dh
2Eh
1Fh
00h
Region 1 Information
Number of identical size erase block = 001Fh+1
32
2Fh
30h
00h
01h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 Kbyte
相關(guān)PDF資料
PDF描述
M29F032D Excalibur JFET-Input High-Output-Drive uPower Quad Operational Amplifier 14-SOIC
M29F032D70N1T 32 Mbit 4Mb x8, Uniform Block 5V Supply Flash Memory
M29F032D70N6T JFET-Input Low Power High Drive Quad Operational Amplifier 20-LCCC -55 to 125
M29F040-70XK1R 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
M29F040-70XN3R 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29F016D_05 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
M29F016D55M1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
M29F016D55M6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory
M29F016D55N1 功能描述:電可擦除可編程只讀存儲器 16M (2Mx8) 55ns RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
M29F016D55N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8, Uniform Block) 5V Supply Flash Memory