參數(shù)資料
型號: M29F032D70N1T
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit 4Mb x8, Uniform Block 5V Supply Flash Memory
中文描述: 32兆位4Mb的× 8,統(tǒng)一座5V電源快閃記憶體
文件頁數(shù): 28/35頁
文件大?。?/td> 224K
代理商: M29F032D70N1T
M29F032D
28/35
Table 20. Device Geometry Definition
Address
Data
Description
Value
27h
16h
Device Size = 2
n
in number of bytes
4 MByte
28h
29h
00h
00h
Flash Device Interface Code description
x8 only
Async.
2Ah
2Bh
00h
00h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
01h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
1
2Dh
2Eh
3Fh
00h
Region 1 Information
Number of identical size erase block = 003Fh+1
64
2Fh
30h
00h
01h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
64 Kbyte
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