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參數(shù)資料
| 型號： | M29F040-120K1R |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座單電源閃存 |
| 文件頁數(shù)： | 11/31頁 |
| 文件大?。?/td> | 232K |
| 代理商： | M29F040-120K1R |
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Symbol
Alt
Parameter
Test Condition
M29F040
Unit
-70
-90
V
CC
= 5V
±
5%
V
CC
= 5V
±
10%
Standard
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next Address Valid
E = V
IL
, G = V
IL
70
90
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
, G = V
IL
70
90
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
G = V
IL
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
G = V
IL
70
90
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
0
0
ns
t
GLQV
(2)
t
OE
Output Enable Low to Output Valid
E = V
IL
30
35
ns
t
EHQX
t
OH
Chip Enable High to Output
Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
20
20
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
E = V
IL
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
20
20
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
, G = V
IL
20
20
ns
Notes:
1. Sampled only, not 100% tested.
2. G may be delayed by up to t
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
3. The temperature range –40 to 125
°
CC
= 5V
±
5%.
Table 12A. Read AC Characteristics
(T
A
= 0 to 70
°
C, –20 to 85
°
C, –40 to 85
°
C or –40 to 125
°
C)
(3)
Block Erase (BE) instruction
. This instruction
uses a minimum of six write cycles. The Erase
Set-up command 80h is written to address 5555h
on third cycle after the two coded cycles. The Block
Erase Confirm command 30h is written on sixth
cycle after another two coded cycles. During the
input of the second command an address within
the block to be erased is given and latched into the
memory. Additional Block Erase confirm com-
mands and block addresses can be written sub-
sequently to erase other blocks in parallel, without
further coded cycles. The erase will start after an
Erase timeout period of about 100
μ
s. Thus, addi-
tional Block Erase commands must be given within
this delay. The input of a new Block Erase com-
mand will restart the timeout period. The status of
the internal timer can be monitored through the
level of DQ3, if DQ3 is ’0’ the Block Erase Com-
mand has been given and the timeout is running, if
DQ3 is ’1’, the timeout has expired and the P/E.C
is erasing the block(s). Before and during Erase
timeout, any command different from 30h will abort
the instruction and reset the device to read array
mode. It is not necessary to program the block with
00h as the P/E.C. will do this automatically before
erasing to FFh. Read operations after the sixth
rising edge of W or E output the status register bits.
During the execution of the erase by the P/E.C., the
memory accepts only the ES (Erase Suspend) and
RST (Reset) instructions. Data Polling bit DQ7
returns ’0’ while the erasure is in progress and ’1’
when it has completed. The Toggle Bit DQ6 toggles
during the erase operation. It stops when erase is
completed. After completion the Status Register
bit DQ5 returns ’1’ if there has been an Erase
Failure because erasure has not completed even
after the maximum number of erase cycles have
been executed. In this case, it will be necessary to
input a Reset (RST) to the command interface in
order to reset the P/E.C.
11/31
M29F040
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F040-120K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
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