參數(shù)資料
型號(hào): M29F040-120XK3TR
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,統(tǒng)一座單電源閃存
文件頁(yè)數(shù): 15/31頁(yè)
文件大小: 232K
代理商: M29F040-120XK3TR
Symbol
Alt
Parameter
M29F040
Unit
-120
-150
V
CC
= 5V
±
10%
V
CC
= 5V
±
10%
Standard
Interface
Standard
Interface
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
120
150
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
0
0
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
50
50
ns
t
DVWH
t
DS
Input Valid to Write Enable High
50
50
ns
t
WHDX
t
DH
Write Enable High to Input Transition
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
20
20
ns
t
AVWL
t
AS
Address Valid to Write Enable Low
0
0
ns
t
WLAX
t
AH
Write Enable Low to Address Transition
50
50
ns
t
GHWL
Output Enable High to Write Enable Low
0
0
ns
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
50
50
μ
s
t
WHQV1
(1)
Write Enable High to Output Valid (Program)
10
10
μ
s
t
WHQV2
(1)
Write Enable High to Output Valid
(Block Erase)
1.0
30
1.0
30
sec
t
WHGL
t
OEH
Write Enable High to Output Enable Low
0
0
ns
Note:
1. Time is measured to Data Polling or Toggle Bit, t
WHQV
= t
WHQ7V
+ t
Q7VQV
Table 13B. Write AC Characteristics, Write Enable Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C, –40 to 85
°
C or –40 to 125
°
C)
15/31
M29F040
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