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參數(shù)資料
| 型號： | M29F080A-90N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8, Uniform Block Single Supply Flash Memory |
| 中文描述： | 8兆1兆× 8，統(tǒng)一座單電源閃存 |
| 文件頁數(shù)： | 2/21頁 |
| 文件大?。?/td> | 131K |
| 代理商： | M29F080A-90N1T |
M29F080A
2/21
Figure 2. TSOP Connections
A1
A2
A3
DQ1
DQ0
DQ2
A10
A9
A4
A7
A6
A5
A14
A13
A12
NC
NC
A17
A16
A18
DQ7
DQ6
A19
A0
W
G
RB
DQ5
DQ4
DQ3
VSS
VCC
VSS
E
RP
A11
NC
VCC
AI00520B
M29F080A
10
11
1
20
21
30
31
40
A15
A8
Figure 3. SO Connections
A2
A1
A0
A6
A5
A4
NC
NC
A3
A17
A18
A19
NC
NC
NC
NC
W
G
RB
DQ7
A16
DQ6
DQ5
DQ2
DQ3
VSS
VSS
VCC
DQ4
A13
A14
E
A12
NC
RP
A11
A7
VCC
A10
A9
A8
AI00521B
M29F080A
8
9
10
11
12
13
14
15
16
17
2
3
4
5
6
7
32
31
30
29
28
27
26
25
24
23
22
20
21
19
18
DQ0
DQ1
44
43
42
41
39
38
37
36
35
34
33
A15
40
1
Table 1. Signal Names
A0-A19
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
SUMMARY DESCRIPTION
The M29F080A is an 8 Mbit (1Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performedus-
ing a single 5V supply. On power-up the memory
defaults to its Read mode where it can be read in
the same way as a ROM or EPROM.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Blocks can be
protected in groups to preventaccidental Program
or Erase commands from modifying the memory.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies theprocess of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a program or eraseoperation can bedetected and
any error conditions identified. The command set
required to control the memory is consistent with
JEDEC standards.
Chip Enable, Output Enableand Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in a TSOP40 (10 x 20mm)
and SO44 packages and it is supplied with all the
bits erased (set to ’1’).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29F080A-90N3T | 8 Mbit 1Mb x8, Uniform Block Single Supply Flash Memory |
| M29F080A-90N6T | Excalibur High-Speed JFET-Input Operational Amplifier 8-PDIP -40 to 85 |
| M29F080A-70N1T | 8 Mbit 1Mb x8, Uniform Block Single Supply Flash Memory |
| M29F080A-70M6T | 8 Mbit 1Mb x8, Uniform Block Single Supply Flash Memory |
| M29F080A-70M3T | Digital General Purpose Timer; RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F080A90N6 | 功能描述:閃存 8M (1Mx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D55N6 | 功能描述:閃存 8M (1Mx8) 55ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D70M1 | 功能描述:閃存 SO-44 8M (1MX8) 70NS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D70M6 | 功能描述:閃存 8M (1Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D70N1 | 功能描述:閃存 8M (1Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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