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參數(shù)資料
| 型號： | M29F080A-90N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Excalibur High-Speed JFET-Input Operational Amplifier 8-PDIP -40 to 85 |
| 中文描述： | 8兆1兆× 8，統(tǒng)一座單電源閃存 |
| 文件頁數(shù)： | 5/21頁 |
| 文件大?。?/td> | 131K |
| 代理商： | M29F080A-90N6T |
5/21
M29F080A
Table 4. Bus Operations
Note: X = V
IL
or V
IH
.
Operation
E
G
W
Address Inputs
Data
Inputs/Outputs
Bus Read
V
IL
V
IL
V
IH
Cell Address
Data Output
Bus Write
V
IL
V
IH
V
IL
Command Address
Data Input
Output Disable
X
V
IH
V
IH
X
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Read Manufacturer
Code
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IL
, A9 = V
ID
,
Others V
IL
or V
IH
20h
Read Device Code
V
IL
V
IL
V
IH
A0 = V
IH
, A1 = V
IL
, A9 = V
ID
,
Others V
IL
or V
IH
F1h
Output Disable.
The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, V
IH
.
Standby.
When Chip Enable is High, V
IH
, the
Data Inputs/Outputs pins are placed in the high-
impedance state and the Supply Current is re-
duced to the Standby level.
When Chip Enable is at V
IH
the Supply Current is
reduced to the TTL Standby Supply Current, I
CC2
.
To further reduce the Supply Current to theCMOS
Standby Supply Current, I
CC3
, ChipEnableshould
be held within V
CC
±
0.2V. For Standby current
levels see Table 10, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, I
CC4
, for Program or Erase operationsun-
til the operation completes.
Automatic Standby.
If CMOS levels (V
CC
±
0.2V)
are usedto drive the busand the busis inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to the Standby Supply Current, I
CC3
. The
Data Inputs/Outputs will still output data if a Bus
Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
ID
to be applied to some pins.
Electronic Signature.
The
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Table 4, Bus Operations.
Block Protection
and
Blocks Unprotection.
Blocks
can beprotected ingroups against accidental Pro-
gram or Erase. See Table 3, Block Addresses, for
details of which blocks must be protected together
as a group. Protected blocks can be unprotected
to allow data to be changed. Block Protection and
Block Unprotection operations must only be per-
formed on programming equipment.
For further information refer to Application Note
AN1122, Applying Protection and Unprotection to
M29 Series Flash.
memory
has
two
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