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參數(shù)資料
| 型號： | M29F080D55N1T |
| 廠商： | 意法半導體 |
| 英文描述： | 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory |
| 中文描述： | 8兆（1兆× 8，統(tǒng)一座）5V電源快閃記憶體 |
| 文件頁數(shù)： | 12/36頁 |
| 文件大?。?/td> | 252K |
| 代理商： | M29F080D55N1T |
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M29F080D
12/36
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. If any attempt is made to
program in a protected block or in the suspended
block then the Program command is ignored and
the data remains unchanged. The Status Register
is not read and no error condition is given. Read-
ing from blocks that are being erased will output
the Status Register.
It is also possible to issue the Auto Select, Read
CFI Query and Unlock Bypass commands during
an Erase Suspend. The Read/Reset command
must be issued to return the device to Read Array
mode before the Resume command will be ac-
cepted.
Erase Resume Command.
The Erase Resume
command must be used to restart the Program/
Erase Controller after an Erase Suspend. The de-
vice must be in Read Array mode before the Re-
sume command will be accepted. An erase can be
suspended and resumed more than once.
Read CFI Query Command.
The
Query Command is used to read data from the
Common Flash Interface (CFI) Memory Area. This
Read
CFI
command is valid when the device is in the Read
Array mode, or when the device is in Autoselected
mode.
One Bus Write cycle is required to issue the Read
CFI Query Command. Once the command is is-
sued subsequent Bus Read operations read from
the Common Flash Interface Memory Area.
The Read/Reset command must be issued to re-
turn the device to the previous mode (the Read Ar-
ray mode or Autoselected mode). A second Read/
Reset command would be needed if the device is
to be put in the Read Array mode from Autoselect-
ed mode.
See Appendix B, Tables 17, 18, 19, 20, 21 and 22
for details on the information contained in the
Common Flash Interface (CFI) memory area.
Block Protect and
Chip Unprotect Com-
mands.
Groups of blocks can be protected
against accidental Program or Erase. The Protec-
tion Groups are shown in Appendix A, Table 16.
The whole chip can be unprotected to allow the
data inside the blocks to be changed.
Block Protect and Chip Unprotect operations are
described in Appendix C.
相關(guān)PDF資料 |
PDF描述 |
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| M29F080D55N6T | 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F080D70M1T | 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F080D70M6T | 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F080D70N | 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory |
| M29F080D70N1T | 8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F080D55N6 | 功能描述:閃存 8M (1Mx8) 55ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D70M1 | 功能描述:閃存 SO-44 8M (1MX8) 70NS RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D70M6 | 功能描述:閃存 8M (1Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D70N1 | 功能描述:閃存 8M (1Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F080D70N6 | 功能描述:閃存 8M (1Mx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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