- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359027 > M29F080D90N1T (意法半導體) CLAMP PDF資料下載
參數(shù)資料
| 型號： | M29F080D90N1T |
| 廠商： | 意法半導體 |
| 英文描述： | CLAMP |
| 中文描述： | 8兆（1兆× 8，統(tǒng)一座）5V電源快閃記憶體 |
| 文件頁數(shù)： | 5/36頁 |
| 文件大?。?/td> | 252K |
| 代理商： | M29F080D90N1T |
第1頁第2頁第3頁第4頁當前第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
5/36
M29F080D
SUMMARY DESCRIPTION
The M29F080D is a 8 Mbit (1Mb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single low voltage 5V supply. On power-up
the memory defaults to its Read mode where it can
be read in the same way as a ROM or EPROM.
The memory is divided into 16 uniform blocks of
64Kbytes (see Figure 5, Block Addresses) that
can be erased independently so it is possible to
preserve valid data while old data is erased.
Blocks can be protected in groups of 4 to prevent
accidental Program or Erase commands from
modifying the memory. Program and Erase com-
mands are written to the Command Interface of
the memory. An on-chip Program/Erase Controller
simplifies the process of programming or erasing
the memory by taking care of all of the special op-
erations that are required to update the memory
contents. The end of a program or erase operation
can be detected and any error conditions identi-
fied. The command set required to control the
memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP40 (10 x 20mm) and
SO44 packages. Access times of 55, 70 and 90ns
are available. The memory is supplied with all the
bits erased (set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI06141
20
A0-A19
W
DQ0-DQ7
VCC
M29F080D
E
VSS
8
G
RP
RB
A0-A19
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
V
CC
Supply Voltage
V
SS
Ground
NC
Not Connected Internally
相關PDF資料 |
PDF描述 |
|---|---|
| M29F080D90N6T | CLAMP |
| M29F102BB55N1F | 1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory |
| M29F102BB55N1T | 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory |
| M29F102BB70K1F | 1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory |
| M29F102BB70K1T | 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29F100BB70M1 | 功能描述:閃存 128Kx8 or 64Kx16 70n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F100BB90M1 | 功能描述:閃存 128Kx8 or 64Kx16 90n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F100BB90N1 | 功能描述:閃存 128Kx8 or 64Kx16 90n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F100BT70M1 | 功能描述:閃存 SO-44 128KX8 64KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F100BT90M1 | 功能描述:閃存 128Kx8 or 64Kx16 90n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復。