參數(shù)資料
型號(hào): M29F102BB50K1F
廠(chǎng)商: 意法半導(dǎo)體
英文描述: 1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory
中文描述: 1兆位(64Kb的x16插槽,引導(dǎo)塊)單電源閃存
文件頁(yè)數(shù): 15/24頁(yè)
文件大?。?/td> 432K
代理商: M29F102BB50K1F
15/24
M29F102BB
Table 10. DC Characteristics (T
A
= 0 to 70°C
)
Note: 1. Excluding the RP input.
2. Sampled only, not 100% tested.
3. T
A
= 25°C, V
CC
= 5V
Symbol
Parameter
Test Condition
Min
Typ
(3)
Max
Unit
I
LI(1)
Input Leakage Current
0V
V
IN
V
CC
±1
μA
I
LR1
RP Leakage Current High
RP = V
CC
±1
μA
I
LR2
RP Leakage Current Low
RP = V
SS
–0.2
–10
μA
I
LO
Output Leakage Current
0V
V
OUT
V
CC
±1
μA
I
CC1
Supply Current (Read)
E = V
IL
, G = V
IH
, f = 6MHz
6
20
mA
I
CC2
Supply Current (Standby)
E = V
CC
±0.2V,
RP = V
CC
±0.2V
30
100
μA
I
CC3
(2)
Supply Current (Program/
Erase)
Program/Erase
Controller active
20
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2
V
CC
+0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA
0.45
V
V
OH
Output High Voltage
I
OH
= –100μA
V
CC
–0.4
V
V
ID
Identification Voltage
11.5
12.5
V
I
ID
Identification Current
A9 = V
ID
100
μA
V
LKO
(2)
Program/Erase Lockout
Supply Voltage
3.2
4.2
V
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