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參數(shù)資料
| 型號： | M29F200BB70M3T |
| 廠商： | 意法半導體 |
| 英文描述： | Single Bus Buffer Gate With 3-State Output 5-SOT-23 -40 to 85 |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動座單電源閃存 |
| 文件頁數(shù)： | 8/22頁 |
| 文件大小： | 146K |
| 代理商： | M29F200BB70M3T |
M29F200BT, M29F200BB
8/22
The Block Protection Status of each block can be
read using a Bus Read operation with A0 = V
IL
,
A1 = V
IH
, and A12-A16 specifying the address of
the block. The other address bits may be set toei-
ther V
IL
or V
IH
. If the addressed block is protect-
ed then 01h is output on Data Inputs/Outputs
DQ0-DQ7, otherwise 00h is output.
Program Command.
The
can be used to program a value to one address in
the memory array at a time. The command re-
quires fourBus Write operations, the final writeop-
eration latches theaddress and data intheinternal
state machine and starts the Program/Erase Con-
troller.
If the address falls in a protected block then the
Program command is ignored, the data remains
unchanged. The Status Register is neverread and
no error condition is given.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given inTable 6. Bus Read op-
erations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. ARead/Reset command must be issued to re-
set the error condition and return to Read mode.
Program
command
Note that the Programcommand cannot change a
bit set at ’0’ backto ’1’ and attempting to do so will
cause an error. One of the Erase Commands must
be used to set all the bits in a blockor in thewhole
memory from ’0’ to ’1’.
Unlock Bypass Command.
The Unlock Bypass
command is used in conjunction with the Unlock
Bypass Program command to program the memo-
ry. When the access time to the device is long (as
with some EPROM programmers) considerable
time saving can be made by using these com-
mands. Three Bus Write operations are required
to issue the Unlock Bypass command.
Once the Unlock Bypass command has been is-
sued the memory will only accept the Unlock By-
pass Program command and the Unlock Bypass
Reset command. The memory can be read as if in
Read mode.
Unlock Bypass Program Command.
The
lock Bypass Program command can be used to
program one address in memory at a time. The
command requires two Bus Write operations, the
final write operation latches the address and data
in the internal state machine and starts the Pro-
gram/Erase Controller.
The Program operation using the Unlock Bypass
Program command behaves identically to the Pro-
gram operation using the Program command. A
protected block cannot be programmed; the oper-
ation cannot be aborted and theStatus Register is
read. Errors must be reset using the Read/Reset
command, which leaves the device in Unlock By-
pass Mode. See the Program command for details
on the behavior.
Un-
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C)
Note: 1. T
A
= 25
°
C, V
CC
= 5V.
Parameter
Min
Typ
(1)
Typical after
100k W/E Cycles
(1)
Max
Unit
Chip Erase (All bits in the memory set to ‘0’)
0.8
0.8
sec
Chip Erase
2.5
2.5
10
sec
Block Erase (64 Kbytes)
0.6
0.6
4
sec
Program (Byte or Word)
8
8
150
μ
s
Chip Program (Byte by Byte)
2.3
2.3
9
sec
Chip Program (Word by Word)
1.2
1.2
4.5
sec
Program/Erase Cycles (per Block)
100,000
cycles
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29F200BB70M6 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70M6E | 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70M6T | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70N1 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70N1T | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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