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參數(shù)資料
| 型號(hào)： | M29F200BB70MT3 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 128K X 16 FLASH 5V PROM, 70 ns, PDSO44 |
| 封裝： | 0.500 INCH, PLASTIC, SO-44 |
| 文件頁數(shù)： | 29/29頁 |
| 文件大小： | 583K |
| 代理商： | M29F200BB70MT3 |
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M29F200BT, M29F200BB
BUS OPERATIONS
There are five standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby and Automatic Standby. See
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Bus Read. Bus Read operations read from the
memory cells, or specific registers in the Com-
mand Interface. A valid Bus Read operation in-
volves setting the desired address on the Address
Inputs, applying a Low signal, VIL, to Chip Enable
and Output Enable and keeping Write Enable
High, VIH. The Data Inputs/Outputs will output the
value, see Figure 9., Read Mode AC Waveforms,
70°C, –40 to 85°C or –40 to 125°C), for details of
when the output becomes valid.
Bus Write. Bus Write operations write to the
Command Interface. A valid Bus Write operation
begins by setting the desired address on the Ad-
dress Inputs. The Address Inputs are latched by
the Command Interface on the falling edge of Chip
Enable or Write Enable, whichever occurs last.
The Data Inputs/Outputs are latched by the Com-
mand Interface on the rising edge of Chip Enable
or Write Enable, whichever occurs first. Output En-
able must remain High, VIH, during the whole Bus
Characteristics, for details of the timing require-
ments.
Output Disable. The Data Inputs/Outputs are in
the high impedance state when Output Enable is
High, VIH.
Standby. When Chip Enable is High, VIH, the
Data Inputs/Outputs pins are placed in the high-
impedance state and the Supply Current is re-
duced to the Standby level.
When Chip Enable is at VIH the Supply Current is
reduced to the TTL Standby Supply Current, ICC2.
To further reduce the Supply Current to the CMOS
Standby Supply Current, ICC3, Chip Enable should
be held within VCC ± 0.2V. For Standby current
levels see Table 11., DC Characteristics (TA = 0 to
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, ICC4, for Program or Erase operations un-
til the operation completes.
Automatic Standby. If CMOS levels (VCC ±
0.2V) are used to drive the bus and the bus is in-
active for 150ns or more the memory enters Auto-
matic Standby where the internal Supply Current
is reduced to the CMOS Standby Supply Current,
ICC3. The Data Inputs/Outputs will still output data
if a Bus Read operation is in progress.
Special Bus Operations. Additional bus opera-
tions can be performed to read the Electronic Sig-
nature and also to apply and remove Block
Protection. These bus operations are intended for
use by programming equipment and are not usu-
ally used in applications. They require VID to be
applied to some pins.
Electronic Signature. The
memory
has
two
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
Block Protection and Blocks Unprotection.
Each block can be separately protected against
accidental Program or Erase. Protected blocks
can be unprotected to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on pro-
gramming equipment and the other for in-system
use. For further information refer to Application
Note AN1122, Applying Protection and Unprotec-
tion to M29 Series Flash.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F200BB70N1 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70N1T | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70N3 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70N6 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BB70N6E | 功能描述:IC FLASH 2MBIT 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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