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參數(shù)資料
| 型號： | M29F200BB90M1T |
| 廠商： | 意法半導體 |
| 英文描述： | Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動座單電源閃存 |
| 文件頁數(shù)： | 6/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | M29F200BB90M1T |
M29F200BT, M29F200BB
6/22
Standby.
When Chip Enable is High, V
IH
, the
Data Inputs/Outputs pins are placed in the high-
impedance state and the Supply Current is re-
duced to the Standby level.
When Chip Enable is at V
IH
the Supply Current is
reduced to the TTL Standby Supply Current, I
CC2
.
To further reduce the Supply Current to theCMOS
Standby Supply Current, I
CC3
, ChipEnableshould
be held within V
CC
±
0.2V. For Standby current
levels see Table 10, DC Characteristics.
During program or erase operations the memory
will continue to use the Program/Erase Supply
Current, I
CC4
, for Program or Erase operationsun-
til the operation completes.
Automatic Standby.
If CMOS levels (V
CC
±
0.2V)
are usedto drive the busand the busis inactive for
150ns or more the memory enters Automatic
Standby where the internal Supply Current is re-
duced to theCMOS Standby Supply Current, I
CC3
.
The Data Inputs/Outputs will still output data if a
Bus Read operation is in progress.
Special Bus Operations
Additional bus operations can be performed to
read the Electronic Signature and also to apply
and remove Block Protection. These bus opera-
tions are intended for use by programming equip-
ment and are not usually used in applications.
They require V
ID
to be applied to some pins.
Electronic Signature.
The
codes, the manufacturer code and the device
code, that can be read to identify the memory.
These codes can be read by applying the signals
listed in Tables 4A and 4B, Bus Operations.
Block Protection
and
BlocksUnprotection.
Each
block can be separately protected against acci-
dental Programor Erase. Protected blocks can be
unprotected to allow data to be changed.
There are two methods available for protecting
and unprotecting the blocks, one for use on pro-
gramming equipment and the other for in-system
use. For further information refer to Application
Note AN1122, Applying Protection and Unprotec-
tion to M29 Series Flash.
memory
has
two
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The longcommand sequences
are imposed to maximize data security.
The address used for the commands changes de-
pending on whether the memory is in 16-bit or 8-
bit mode. See either Table 5A, or 5B, depending
on the configuration that is being used, for a sum-
mary of the commands.
Read/Reset Command.
The Read/Reset com-
mand returns the memory to its Read mode where
it behaves like a ROM or EPROM. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be used to issue
the Read/Reset command.
If the Read/Reset command is issued during a
Block Erase operation orfollowing a Programming
or Erase errorthen the memory will take upto 10
μ
s
to abort. During the abort period no valid data can
be read from the memory. Issuing a Read/Reset
command during a Block Erase operation will
leave invalid data in the memory.
Auto Select Command.
The Auto Select com-
mand is used to read the Manufacturer Code, the
Device Code and the Block Protection Status.
Three consecutive Bus Write operations are re-
quired to issue the Auto Select command. Once
the Auto Select command is issued the memory
remains in Auto Select mode until another com-
mand is issued.
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = V
IL
and A1 = V
IL
. The other address bits
may be set to either V
IL
or V
IH
. The Manufacturer
Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read
operation with A0 = V
IH
and A1 = V
IL
. The other
address bits may be set to either V
IL
or V
IH
. The
Device Code for the M29F200BT is 00D3h and for
the M29F200BB is 00D4h.
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| M29F200BB70N6T | Single Bus Buffer Gate With 3-State Output 5-SOT-23 -40 to 85 |
| M29F200BB70N3T | Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 |
| M29F200BB70N1T | Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 |
| M29F200BB70M6T | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
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| M29F200BB90M3 | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 5V 2MBIT 256KX8/128KX16 70NS 44SOIC - Trays |
| M29F200BT45M1 | 功能描述:閃存 SO-44 256KX8 128KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BT45N1 | 功能描述:閃存 256Kx8 or 128Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BT70M1 | 功能描述:閃存 DISC BY STM 05/03 256KX8 OR 128KX16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BT70M6E | 功能描述:IC FLASH 2MBIT 70NS 44SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應商設備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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