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參數(shù)資料
| 型號： | M29F200BT45M3T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Single Bus Buffer Gate With 3-State Output 5-SOT-23 -40 to 85 |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動(dòng)座單電源閃存 |
| 文件頁數(shù)： | 22/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | M29F200BT45M3T |
M29F200BT, M29F200BB
22/22
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相關(guān)PDF資料 |
PDF描述 |
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| M29F200BB90M1T | Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 |
| M29F200BB70N6T | Single Bus Buffer Gate With 3-State Output 5-SOT-23 -40 to 85 |
| M29F200BB70N3T | Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 |
| M29F200BB70N1T | Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 |
| M29F200BB70M6T | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F200BT45N1 | 功能描述:閃存 256Kx8 or 128Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BT70M1 | 功能描述:閃存 DISC BY STM 05/03 256KX8 OR 128KX16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BT70M6E | 功能描述:IC FLASH 2MBIT 70NS 44SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動(dòng) SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| M29F200BT70N1 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200BT70N6E | 功能描述:IC FLASH 2MBIT 70NS 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動(dòng) SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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