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參數(shù)資料
| 型號： | M29F200T-90N3R |
| 廠商： | 意法半導體 |
| 英文描述： | Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-UQFN -40 to 85 |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動座單電源閃存 |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | M29F200T-90N3R |
9/22
M29F200BT, M29F200BB
Unlock Bypass Reset Command.
The
Bypass Reset command can be used to return to
Read/Reset mode from Unlock Bypass Mode.
Two BusWrite operationsare required to issuethe
Unlock Bypass Reset command.
Chip Erase Command.
The Chip Erase com-
mand canbeused to erasethe entirechip. Six Bus
Write operations are required to issue the Chip
Erase Command and start the Program/Erase
Controller.
If any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation ap-
pears tostart but will terminate withinabout100
μ
s,
leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the erase operation the memory will ignore
all commands. It is not possible to issue any com-
mand to abort the operation. Typical chip erase
times are given in Table 6. All Bus Read opera-
tions during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. ARead/Reset command must be issued to re-
set the error condition and return to Read Mode.
The Chip Erase Command sets allof thebits in un-
protected blocks of the memory to ’1’. All previous
data is lost.
Block Erase Command.
The Block Erase com-
mand can be used to erase a list of one or more
blocks. Six Bus Write operations are required to
select the first block in the list. Each additional
block in the list can be selected by repeating the
sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts
the Program/Erase Controller about 50
μ
s after the
last Bus Write operation. Oncethe Program/Erase
Controller starts it is not possible to select any
more blocks. Each additional block must therefore
be selected within 50
μ
s of the last block.The 50
μ
s
timer restarts when an additional block isselected.
The Status Register can be read after the sixth
Bus Write operation. See the Status Register for
details on how to identify if the Program/Erase
Controller has started the Block Erase operation.
If any selected blocks are protected then these are
ignored and all the other selected blocks are
Unlock
erased. If all of the selected blocks are protected
the Block Erase operation appears to start but will
terminate within about 100
μ
s, leaving the data un-
changed. No errorcondition is given when protect-
ed blocks are ignored.
During the Block Erase operation the memory will
ignore all commands except the Erase Suspend
and Read/Reset commands. Typical block erase
times are given in Table 6. All Bus Read opera-
tions during the Block Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Block Erase operation has completedthe
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
The Block Erase Command sets all of the bits in
the unprotected selected blocks to ’1’. All previous
data in the selected blocks is lost.
Erase Suspend Command.
The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15
μ
s of the Erase Suspend Command being is-
sued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase willbe suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It will not be possible to select any further
blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. Reading from blocks that
are being erased willoutput the Status Register. It
is also possible toenter theAuto Select mode: the
memory will behaveas in the Auto Selectmode on
all blocks until a Read/Reset command returns the
memory to Erase Suspend mode.
Erase Resume Command.
The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29F200T-90N1TR | Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-US8 -40 to 85 |
| M29F200T-90N1R | Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-US8 -40 to 85 |
| M29F200T-120M6TR | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M29F200T-120M6R | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M29F200T-120M3TR | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F400B-90N1 | 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BB120M1 | 功能描述:閃存 512Kx8 or 256Kx16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BB45N1 | 功能描述:閃存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BB45N6 | 制造商:STMicroelectronics 功能描述: |
| M29F400BB55M1 | 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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