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參數(shù)資料
| 型號： | M29F400B-120M6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85 |
| 中文描述： | 4兆位512KB的x8或256Kb的x16插槽，啟動座單電源閃存 |
| 文件頁數(shù)： | 11/22頁 |
| 文件大小： | 208K |
| 代理商： | M29F400B-120M6TR |
11/22
M29F400BT, M29F400BB
Figure 4. Data Polling Flowchart
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
at VALID ADDRESS
FAIL
PASS
AI03598
D=
DATA
YES
NO
YES
NO
DQ5
= 1
D=
DATA
YES
NO
Figure 5. Data Toggle Flowchart
READ DQ6
START
READ DQ6
TWICE
FAIL
PASS
AI01370B
D=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
D=
TOGGLE
READ
DQ5 & DQ6
Erase Timer Bit (DQ3).
The Erase Timer Bit can
be used to identify the start of Program/Erase
Controller operation during a Block Erase com-
mand. Once the Program/Erase Controller starts
erasing the Erase Timer Bit is set to ’1’. Before the
Program/Erase Controller starts the Erase Timer
Bit is set to ’0’ and additional blocks to be erased
may be written to the Command Interface. The
Erase Timer Bit is output on DQ3 when the Status
Register is read.
Alternative Toggle Bit (DQ2).
The
Toggle Bit can be used to monitor the Program/
Erase controller during Erase operations. The Al-
ternative Toggle Bit is output on DQ2 when the
Status Register is read.
During Chip Erase and Block Erase operations the
Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations from addresses
Alternative
within the blocks being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle Bit
changes from ’0’ to ’1’ to ’0’, etc. with successive
Bus Read operations from addresses within the
blocks being erased. Bus Read operations to ad-
dresses within blocks not being erased will output
the memory cell data as if in Read mode.
After an Erase operation that causes the Error Bit
to be set the Alternative Toggle Bit can be used to
identify which block or blocks have caused the er-
ror. The Alternative Toggle Bit changes from ’0’ to
’1’ to ’0’, etc. with successive Bus Read Opera-
tions from addresses within blocks that have not
erased correctly. The Alternative Toggle Bit does
not change if the addressed block has erased cor-
rectly.
相關(guān)PDF資料 |
PDF描述 |
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| M29F400B-120N1R | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M29F400B-70M3TR | 600V SMPS Series N-Channel IGBT; Package: TO-247; No of Pins: 3; Container: Rail |
| M29F400B-70M6R | 600V SMPS Series N-Channel IGBT |
| M29F400T-70M6R | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
| M29F400BT-45M6T | 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F400B-90N1 | 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BB120M1 | 功能描述:閃存 512Kx8 or 256Kx16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BB45N1 | 功能描述:閃存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400BB45N6 | 制造商:STMicroelectronics 功能描述: |
| M29F400BB55M1 | 功能描述:閃存 512Kx8 or 256Kx16 55 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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