參數(shù)資料
型號(hào): M29W004B-150N1TR
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,啟動(dòng)塊低壓?jiǎn)坞娫撮W存
文件頁數(shù): 20/30頁
文件大?。?/td> 222K
代理商: M29W004B-150N1TR
Symbol
Alt
Parameter
M29W004T / M29W004B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
V
CC
= 2.7V to 3.6V
Min
Max
Min
Max
t
AVAV
t
WC
Address Valid to Next Address Valid
120
150
ns
t
WLEL
t
WS
Write Enable Low to Chip Enable Low
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip Enable High
50
50
ns
t
DVEH
t
DS
Input Valid to Chip Enable High
50
50
ns
t
EHDX
t
DH
Chip Enable High to Input Transition
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write Enable High
0
0
ns
t
EHEL
t
CPH
Chip Enable High to Chip Enable Low
20
20
ns
t
AVEL
t
AS
Address Valid to Chip Enable Low
0
0
ns
t
ELAX
t
AH
Chip Enable Low to Address Transition
50
50
ns
t
GHEL
Output Enable High Chip Enable Low
0
0
ns
t
VCHWL
t
VCS
V
CC
High to Write Enable Low
50
50
μ
s
t
EHGL
t
OEH
Chip Enable High to Output Enable Low
0
0
ns
t
PHPHH
(1,2)
t
VIDR
RP Rise TIme to V
ID
500
500
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
EHRL (1)
t
BUSY
Program Erase Valid to RB Delay
90
90
ns
t
PHWL (1)
t
RSP
RP High to Write Enable Low
4
4
μ
s
Notes:
1. Sample only, not 100% tested.
2. This timing is for Temporary Block Unprotection operation.
Table 16B. Write AC Characteristics, Chip Enable Controlled
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
20/30
M29W004T, M29W004B
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