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參數(shù)資料
| 型號： | M29W004B-150N6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，啟動塊低壓單電源閃存 |
| 文件頁數(shù)： | 10/30頁 |
| 文件大?。?/td> | 222K |
| 代理商： | M29W004B-150N6TR |
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DQ
Name
Logic Level
Definition
Note
7
Data
Polling
’1’
Erase Complete or erase
block in Erase Suspend
Indicates the P/E.C. status, check during
Program or Erase, and on completion
before checking bits DQ5 for Program or
Erase Success.
’0’
Erase On-going
DQ
Program Complete or data
of non erase block during
Erase Suspend
DQ
Program On-going
6
Toggle Bit
’-1-0-1-0-1-0-1-’
Erase or Program On-going
Successive reads output complementary
data on DQ6 while Programming or Erase
operations are on-going. DQ6 remains at
constant level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
DQ
Program Complete
’-1-1-1-1-1-1-1-’
Erase Complete or Erase
Suspend on currently
addressed block
5
Error Bit
’1’
Program or Erase Error
This bit is set to ’1’ in the case of
Programming or Erase failure.
’0’
Program or Erase On-going
4
Reserved
3
Erase
Time Bit
’1’
Erase Timeout Period Expired
P/E.C. Erase operation has started. Only
possible command entry is Erase Suspend
(ES).
’0’
Erase Timeout Period
On-going
An additional block to be erased in parallel
can be entered to the P/E.C.
2
Toggle Bit
’-1-0-1-0-1-0-1-’
Chip Erase, Erase or Erase
Suspend on the currently
addressed block.
Erase Error due to the
currently addressed block
(when DQ5 = ’1’).
Indicates the erase status and allows to
identify the erased block
1
Program on-going, Erase
on-going on another block or
Erase Complete
DQ
Erase Suspend read on
non Erase Suspend block
1
Reserved
0
Reserved
Notes:
Logic level ’1’ is High, ’0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
Table 9. Status Register Bits
10/30
M29W004T, M29W004B
相關(guān)PDF資料 |
PDF描述 |
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| M29W004B-90N1TR | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BB | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-90N6TR | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W004B-90N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-90N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004B-90N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BB120N1 | 功能描述:閃存 4M (512Kx8) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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