參數(shù)資料
型號(hào)： M29W004BB90N1T
廠商： 意法半導(dǎo)體
英文描述： 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
中文描述： 4兆位512KB的× 8，啟動(dòng)塊低壓?jiǎn)坞娫撮W存
文件頁(yè)數(shù)： 13/30頁(yè)
文件大小： 222K
代理商： M29W004BB90N1T
Symbol
Alt
Parameter
Test
Condition
M29W004T / M29W004B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next Address Valid
E = V
IL
,
G = V
IL
90
100
ns
t
AVQV
t
ACC
Address Valid to Output Valid
E = V
IL
,
G = V
IL
90
100
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
G = V
IL
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
G = V
IL
90
100
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to Output
Transition
E = V
IL
0
0
ns
t
GLQV
(2)
t
OE
Output Enable Low to Output Valid
E = V
IL
35
40
ns
t
EHQX
t
OH
Chip Enable High to Output Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
30
30
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
E = V
IL
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
E = V
IL
30
30
ns
t
AXQX
t
OH
Address Transition to Output
Transition
E = V
IL
,
G = V
IL
0
0
ns
t
PLYH
(1,3)
t
RRB
t
READY
RP Low to Read Mode
10
10
μ
s
t
PHEL
t
RH
RP High to Chip Enable Low
50
50
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
Notes:
1. Sampled only, not 100% tested.
2. G may be delayed by up to t
- t
after the falling edge of E without increasing t
ELQV
.
3. To be considered only if the Reset pulse is given while the memory is in Erase mode.
Table 14A. Read AC Characteristics
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
13/30
M29W004T, M29W004B
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W004BB90N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004BT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004BT120N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W004BT120N6 功能描述:閃存 4M (512Kx8) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W004BT120N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
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