參數(shù)資料
型號: M29W004BT120N1T
廠商: 意法半導(dǎo)體
英文描述: 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory
中文描述: 4兆位512KB的× 8,啟動(dòng)塊低壓單電源閃存
文件頁數(shù): 24/30頁
文件大?。?/td> 222K
代理商: M29W004BT120N1T
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
FAIL
PASS
AI01369
D=
DATA
YES
NO
YES
NO
DQ5
= 1
D=
DATA
YES
NO
Figure 11. Data Polling Flowchart
READ
DQ2, DQ5 & DQ6
START
READ DQ2, DQ6
FAIL
PASS
AI01873
DQ2=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
DQ2=
TOGGLE
Figure 12. Data Toggle Flowchart
Parameter
M29W004T / M29W004B
Unit
Min
Typ
Typical after
100k W/E Cycles
Chip Erase (Preprogrammed)
1.5
1.7
sec
Chip Erase
6.7
7.0
sec
Boot Block Erase
0.7
sec
Parameter Block Erase
0.6
sec
Main Block (32Kb) Erase
0.9
sec
Main Block (64Kb) Erase
1.4
sec
Chip Program (Byte)
8.2
8.2
sec
Byte Program
10
10
μ
s
Program/Erase Cycles (per Block)
100,000
cycles
Table 18. Program, Erase Times and Program, Erase Endurance Cycles
(T
A
= 0 to 70
°
C; V
CC
= 2.7V to 3.6V)
24/30
M29W004T, M29W004B
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