參數(shù)資料
型號： M29W008EB90N6F
廠商： 意法半導體
英文描述： 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
中文描述： 8兆（1兆× 8，引導塊）3V電源快閃記憶體
文件頁數(shù)： 15/43頁
文件大小： 282K
代理商： M29W008EB90N6F
M29W008ET, M29W008EB
4 Command interface
15/43
During the program operation the memory will ignore all commands. It is not possible to issue
any command to abort or pause the operation. Typical program times are given in
Table 4:
Program, Erase Times and Program, Erase Endurance Cycles
. Bus Read operations during
the program operation will output the Status Register on the Data Inputs/Outputs. See
Section 5: Status register
for more details.
After the program operation has completed the memory will return to the Read mode, unless an
error has occurred. When an error occurs the memory will continue to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
Commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
4.4
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the access time to the device is long (as with some
EPROM programmers) considerable time saving can be made by using these commands.
Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be read
as if in Read mode.
4.5
Unlock Bypass Program command
The Unlock Bypass Program command can be used to program one address in memory at a
time. The command requires two Bus Write operations, the final write operation latches the
address and data and starts the Program/Erase Controller.
The Program operation using the Unlock Bypass Program command behaves identically to the
Program operation using the Program command. A protected block cannot be programmed;
the operation cannot be aborted and the Status Register is read. Errors must be reset using the
Read/Reset command, which leaves the device in Unlock Bypass Mode. See the Program
command for details on the behavior.
4.6
Unlock Bypass Reset command
The Unlock Bypass Reset command can be used to return to Read/Reset mode from Unlock
Bypass Mode. Two Bus Write operations are required to issue the Unlock Bypass Reset
command. Read/Reset command does not exit from Unlock Bypass Mode.
4.7
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write
operations are required to select the first block in the list. Each additional block in the list can be
selected by repeating the sixth Bus Write operation using the address of the additional block.
The Block Erase operation starts the Program/Erase Controller about 50μs after the last Bus
Write operation. Once the Program/Erase Controller starts it is not possible to select any more
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008ET 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008ET70N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008ET70N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
M29W008ET70N6E 制造商:Micron Technology Inc 功能描述:FLASH TOP BLOCK 8MB SMD 29W008
M29W008ET70N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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