參數(shù)資料
型號(hào)： M29W008ET70N1E
廠商： 意法半導(dǎo)體
英文描述： Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC
中文描述： 8兆（1兆× 8，引導(dǎo)塊）3V電源快閃記憶體
文件頁(yè)數(shù)： 18/43頁(yè)
文件大小： 282K
代理商： M29W008ET70N1E
4 Command interface
M29W008ET, M29W008EB
18/43
Table 3.
Commands
Command
(1)
1.
Commands not interpreted in this table will default to read array mode.
L
Bus Write Operations
(2)(3)
2.
X = Don't Care. PA = Program Address, PD = Program Data, BA = Block Address, AB = Additional Block.
3.
For Coded cycles address inputs A15-A19 are don't care.
1st
2nd
3rd
4th
5th
6th
7th
Add Data
Add
Data Add Data Add
Data
Add
Data Add Data Add Data
Read/Reset
(4)(5)
4.
A wait of t
is necessary after a Read/Reset command if the memory was in an Erase or Program mode before starting
any new operation (see
Table 10: Read AC Characteristics
).
5.
The first cycles of the Read/Reset and Auto Select commands are followed by read operations. Any number of read cycles
can occur after the command cycles.
1
+
X
F0h
Read Memory Array until a new write cycle is initiated.
3
+
555h AAh
2AAh
55h
555h
F0h
Read Memory Array until a new write cycle is
initiated.
Auto Select
(5)
3
+
555h AAh
2AAh
55h
555h
90h
Read Electronic Signature or Block Protection Status
until a new write cycle is initiated.
(6)(7)
6.
Signature Address bits A0, A1, at V
IL
will output the Manufacturer Code (20h). Address bits A0 at V
IH
and A1, at V
IL
will
output the Device Code.
7.
Block Protection Address: A0, at V
IL
, A1 at V
IH
and A13-A19 within the Block will output the Block Protection status.
Read Data Polling, Toggle bits or RB until Erase completes.
Program
4
555h AAh
2AAh
55h
555h
A0h
PA
PD
Read Data Polling or Toggle Bit until
Program completes.
Unlock Bypass
3
555h AAh
2AAh
55h
555h
20h
Unlock Bypass
Program
2
X
A0h
PA
PD
Unlock Bypass
Reset
2
X
90h
X
00h
Chip Erase
6
555h AAh
2AAh
55h
555h
80h
555h AAh
2AAh
55h
555h
10h
(8)
8.
Block Erase
6
+
555h AAh
2AAh
55h
555h
80h
555h AAh
2AAh
55h
BA
30h
AB
(9)
9.
Optional, Additional Block (AB) addresses must be entered within the erase time-out delay after last write entry, time-out
status can be verified through DQ3 value (see Erase Timer Bit DQ3 description). When full command is entered, read Data
Polling or Toggle bit until Erase has completed or is suspended.
30h
Erase
Suspend
(10)
10. During Erase Suspend, Read and Data Program functions are allowed in blocks not being erased.
1
X
B0h
Read until Toggle stops, then read all the data needed from any Block(s) not
being erased then Resume Erase.
Erase Resume
1
X
30h
Read Data Polling or Toggle Bits until Erase completes or Erase is suspended
another time.
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M29W008ET70N1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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M29W008ET90N1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
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