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參數(shù)資料
| 型號(hào)： | M29W008ET |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP |
| 中文描述： | 8兆（1兆× 8，引導(dǎo)塊）3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 17/43頁(yè) |
| 文件大?。?/td> | 282K |
| 代理商： | M29W008ET |
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M29W008ET, M29W008EB
4 Command interface
17/43
Endurance Cycles
). Once the Program/Erase Controller has stopped the memory will be set to
Read mode and the Erase will be suspended. If the Erase Suspend command is issued during
the period when the memory is waiting for an additional block (before the Program/Erase
Controller starts) then the Erase is suspended immediately and will start immediately when the
Erase Resume Command is issued. It is not possible to select any further blocks to erase after
the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any attempt
is made to program in a protected block or in the suspended block then the Program command
is ignored and the data remains unchanged. The Status Register is not read and no error
condition is given. Reading from blocks that are being erased will output the Status Register.
It is also possible to issue the Auto Select, during an Erase Suspend. The Read/Reset
command must be issued to return the device to Read Array mode before the Resume
command will be accepted.
4.10 Erase Resume Command
The Erase Resume command must be used to restart the Program/Erase Controller from
Erase Suspend. An erase can be suspended and resumed more than once.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W008T | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP |
| M29W008T-120N1TR | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-PDIP |
| M29W008T-120N5TR | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC -55 to 125 |
| M29W008T-120N6TR | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC -55 to 125 |
| M29W008T-150N1TR | 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W008ET70N1E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
| M29W008ET70N1F | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
| M29W008ET70N6E | 制造商:Micron Technology Inc 功能描述:FLASH TOP BLOCK 8MB SMD 29W008 |
| M29W008ET70N6F | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
| M29W008ET90N1E | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory |
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