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參數資料
| 型號： | M29W008T-120N6TR |
| 廠商： | 意法半導體 |
| 英文描述： | Low Noise High-Speed Precision Single Supply Operational Amplifier 8-SOIC -55 to 125 |
| 中文描述： | 8兆1兆× 8，啟動塊低壓單電源閃存 |
| 文件頁數： | 20/30頁 |
| 文件大?。?/td> | 219K |
| 代理商： | M29W008T-120N6TR |
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AI02192
E
G
W
A0-A19
DQ0-DQ7
VALID
VALID
VCC
tVCHEL
tWHEH
tWHWL
tELWL
tAVWL
tWHGL
tWLAX
tWHDX
tAVAV
tDVWH
tWLWH
tGHWL
RB
tWHRL
Figure 7. Write AC Waveforms, W Controlled
Note:
Address are latched on the falling edge of W, Data is latched on the rising edge of W.
Erase Suspend (ES) Instruction.
The Block
Erase operation may be suspended by this instruc-
tion which consists of writing the command B0h
without any specific address. No Coded cycles are
required. It permits reading of data from another
block and programming in another block while an
erase operation is in progress. Erase suspend is
accepted only during the Block Erase instruction
execution. Writing this command during Erase
timeout will, in addition to suspending the erase,
terminate the timeout. The Toggle bit DQ6 stops
toggling when the P/E.C. is suspended. The Toggle
bits will stop toggling between 0.1
μ
s and 15
μ
s after
the Erase Suspend (ES) command has been writ-
ten. The device will then automatically be set to
Read Memory Array mode. When erase is sus-
pended, a Read from blocks being erased will
output DQ2 toggling and DQ6 at ’1’. A Read from
a block not being erased returns valid data. During
suspension the memory will respond only to the
Erase Resume ER and the Program PG instruc-
tions. A Program operation can be initiated during
erase suspend in one of the blocks not being
erased. It will result in both DQ2 and DQ6 toggling
when the data is being programmed. A Read/Reset
command will definitively abort erasure and result
in invalid data in the blocks being erased.
Erase Resume (ER) Instruction.
If an Erase Sus-
pend instruction was previously executed, the
erase operation may be resumed by giving the
command 30h, at any address, and without any
Coded cycles.
20/30
M29W008T, M29W008B
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| M29W008T-150N6TR | Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC |
| M29W008T-90N1TR | Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M29W008T-150N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-150N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-150N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-90N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-90N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
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